FDS3572

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 10V

Mounting Type :

Surface Mount

Mount :

Surface Mount

JESD-609 Code :

e4

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Threshold Voltage :

4V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Width :

4mm

Power Dissipation-Max :

2.5W Ta

Voltage - Rated DC :

80V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

1990pF @ 25V

Rds On (Max) @ Id, Vgs :

16m Ω @ 8.9A, 10V

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

4V @ 250µA

Weight :

130mg

Turn-Off Delay Time :

31 ns

Pbfree Code :

yes

Turn On Delay Time :

13 ns

Power Dissipation :

2.5W

Number of Terminations :

8

Terminal Form :

Gull wing

Resistance :

16mOhm

Length :

5mm

RoHS Status :

ROHS3 Compliant

Rise Time :

14ns

Qualification Status :

Not Qualified

ECCN Code :

EAR99

Series :

PowerTrench®

Transistor Application :

SWITCHING

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Terminal Position :

Dual

Transistor Element Material :

SILICON

Published :

2003

Continuous Drain Current (ID) :

8.9A

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Number of Elements :

1

Number of Pins :

8

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Factory Lead Time :

12 Weeks

Contact Plating :

Tin

Fall Time (Typ) :

13 ns

Current - Continuous Drain (Id) @ 25°C :

8.9A Ta

Height :

1.5mm

Drain to Source Breakdown Voltage :

80V

Current Rating :

8.9A

Nominal Vgs :

4 V