FDS3572
- Mfr.Part #
- FDS3572
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 80V 8.9A 8SOIC
- Stock
- 23,533
- In Stock :
- 23,533
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pbfree Code :
- yes
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Width :
- 4mm
- Length :
- 5mm
- Turn-Off Delay Time :
- 31 ns
- Current - Continuous Drain (Id) @ 25°C :
- 8.9A Ta
- Continuous Drain Current (ID) :
- 8.9A
- RoHS Status :
- ROHS3 Compliant
- Series :
- PowerTrench®
- Gate to Source Voltage (Vgs) :
- 20V
- Element Configuration :
- Single
- Terminal Form :
- Gull wing
- Drain to Source Breakdown Voltage :
- 80V
- Mounting Type :
- Surface Mount
- FET Type :
- N-Channel
- Current Rating :
- 8.9A
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Contact Plating :
- Tin
- Turn On Delay Time :
- 13 ns
- Power Dissipation-Max :
- 2.5W Ta
- Fall Time (Typ) :
- 13 ns
- Mount :
- Surface Mount
- Rise Time :
- 14ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- JESD-609 Code :
- e4
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Factory Lead Time :
- 12 Weeks
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- Height :
- 1.5mm
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Pins :
- 8
- Published :
- 2003
- Voltage - Rated DC :
- 80V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1990pF @ 25V
- Weight :
- 130mg
- Qualification Status :
- Not Qualified
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Terminal Position :
- Dual
- Nominal Vgs :
- 4 V
- Rds On (Max) @ Id, Vgs :
- 16m Ω @ 8.9A, 10V
- Threshold Voltage :
- 4V
- Power Dissipation :
- 2.5W
- Gate Charge (Qg) (Max) @ Vgs :
- 41nC @ 10V
- Number of Terminations :
- 8
- Resistance :
- 16mOhm
- Datasheets
- FDS3572

N-Channel Tape & Reel (TR) 16m Ω @ 8.9A, 10V ±20V 1990pF @ 25V 41nC @ 10V 8-SOIC (0.154, 3.90mm Width)
FDS3572 Description
FDS3572 is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 80V. The operating temperature of FDS3572 is -55°C~150°C TJ and its maximum power dissipation is 2.5W. FDS3572 has 8 pins and it is available in Tape & Reel (TR) packaging way. The Turn On Delay Time of FDS3572 is 13 ns and its Turn-Off Delay Time is 31 ns.
FDS3572 Features
-
rDS(ON) = 14m? (Typ.), VGS = 10V, ID = 8.9A
-
Qg(tot) = 31nC (Typ.), VGS = 10V
-
Low Miller Charge
-
Low QRR Body Diode
-
Optimized efficiency at high frequencies
-
UIS Capability (Single Pulse and Repetitive Pulse)
FDS3572 Applications
-
Primary switch for Isolated DC/DC converters
-
Distributed Power and Intermediate Bus Architectures
-
High Voltage Synchronous Rectifier for DC Bus Converters
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