FDS3580

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Mfr.Part #
FDS3580
Manufacturer
onsemi
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET N-CH 80V 7.6A 8SOIC
Stock
437
In Stock :
437

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Mounting Type :
Surface Mount
Rise Time :
8ns
Pbfree Code :
yes
Continuous Drain Current (ID) :
7.6A
Terminal Form :
Gull wing
Height :
1.575mm
Voltage - Rated DC :
80V
Transistor Element Material :
SILICON
Rds On (Max) @ Id, Vgs :
29m Ω @ 7.6A, 10V
Fall Time (Typ) :
16 ns
Vgs (Max) :
±20V
Series :
PowerTrench®
Drive Voltage (Max Rds On,Min Rds On) :
6V 10V
Radiation Hardening :
No
JESD-609 Code :
e3
Power Dissipation :
2.5W
Operating Mode :
ENHANCEMENT MODE
Current Rating :
7.6A
Input Capacitance (Ciss) (Max) @ Vds :
1800pF @ 25V
FET Type :
N-Channel
Transistor Application :
SWITCHING
Width :
3.9mm
Gate to Source Voltage (Vgs) :
20V
Factory Lead Time :
11 Weeks
Power Dissipation-Max :
2.5W Ta
Terminal Position :
Dual
Mount :
Surface Mount
Packaging :
Tape and Reel (TR)
Length :
4.9mm
Drain to Source Breakdown Voltage :
80V
Turn-Off Delay Time :
34 ns
Lead Free :
Lead Free
Resistance :
29mOhm
Current - Continuous Drain (Id) @ 25°C :
7.6A Ta
RoHS Status :
ROHS3 Compliant
Element Configuration :
Single
Number of Terminations :
8
Vgs(th) (Max) @ Id :
4V @ 250µA
Number of Pins :
8
Number of Elements :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Weight :
130mg
Package / Case :
8-SOIC (0.154, 3.90mm Width)
ECCN Code :
EAR99
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Terminal Finish :
Tin (Sn)
Operating Temperature :
-55°C~150°C TJ
Published :
2000
Turn On Delay Time :
13 ns
Gate Charge (Qg) (Max) @ Vgs :
46nC @ 10V
Datasheets
FDS3580
Introducing Transistors - FETs, MOSFETs - Single onsemi FDS3580 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Terminations:8, Number of Pins:8, Package / Case:8-SOIC (0.154, 3.90mm Width), Operating Temperature:-55°C~150°C TJ, FDS3580 pinout, FDS3580 datasheet PDF, FDS3580 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDS3580 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDS3580


N-Channel Tape & Reel (TR) 29m Ω @ 7.6A, 10V ±20V 1800pF @ 25V 46nC @ 10V 8-SOIC (0.154, 3.90mm Width)

FDS3580   Description


  The N-channel MOSFET is designed to improve the overall efficiency of DC/DC converters using synchronous or conventional switching PWM controllers. Compared with other MOSFET with similar R DS specifications, these MOSFET have faster switching speed and lower gate charge. The result is an easy-to-drive and safer MOSFET (even at very high frequencies) and a DC/DC power design with higher overall efficiency.


FDS3580    Features

 

7.6 A, 80 V.

RDS(ON ) = 0.029 Ω @ VGS = 10 V

RDS(ON) = 0.033 Ω @ VGS = 6 V.

Low gate charge (34nC typical).

Fast switching speed.

High performance trench technology for extremely low RDS(ON).

High power and current handling capability.


FDS3580     Applications


This product is general usage and suitable for many different applications.

 



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