FDS3670
- Mfr.Part #
- FDS3670
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 6.3A 8SOIC
- Stock
- 28,575
- In Stock :
- 28,575
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- Number of Terminations :
- 8
- JESD-30 Code :
- R-PDSO-G8
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- Vgs (Max) :
- ±20V
- Reach Compliance Code :
- Unknown
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max :
- 2.5W Ta
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drain to Source Voltage (Vdss) :
- 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 8
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- FET Type :
- N-Channel
- Qualification Status :
- COMMERCIAL
- Current - Continuous Drain (Id) @ 25°C :
- 6.3A Ta
- Series :
- PowerTrench®
- Transistor Application :
- SWITCHING
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- DS Breakdown Voltage-Min :
- 100V
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e3
- Drain-source On Resistance-Max :
- 0.03Ohm
- Drain Current-Max (Abs) (ID) :
- 6.3A
- Surface Mount :
- yes
- Terminal Finish :
- MATTE TIN
- Input Capacitance (Ciss) (Max) @ Vds :
- 2.49pF @ 50V
- Terminal Form :
- Gull wing
- Rds On (Max) @ Id, Vgs :
- 32m Ω @ 6.3A, 10V
- Transistor Element Material :
- SILICON
- Gate Charge (Qg) (Max) @ Vgs :
- 80nC @ 10V
- Pbfree Code :
- yes
- Datasheets
- FDS3670
FDS3670 Documents

N-Channel Tape & Reel (TR) 32m Ω @ 6.3A, 10V ±20V 2.49pF @ 50V 80nC @ 10V 100V 8-SOIC (0.154, 3.90mm Width)
FDS3670 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2.49pF @ 50V.There is no drain current on this device since the maximum continuous current it can conduct is 6.3A.In order for DS breakdown voltage to remain above 100V, it should remain above the 100V level.The transistor must receive a 100V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (6V 10V).
FDS3670 Features
a 100V drain to source voltage (Vdss)
FDS3670 Applications
There are a lot of Rochester Electronics, LLC
FDS3670 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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