FDS3580
- Mfr.Part #
- FDS3580
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- SMALL SIGNAL FIELD-EFFECT TRANSI
- Stock
- 437
- In Stock :
- 437
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 29m Ω @ 7.6A, 10V
- Fall Time (Typ) :
- 16 ns
- Turn-Off Delay Time :
- 34 ns
- Turn On Delay Time :
- 13 ns
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Height :
- 1.575mm
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Breakdown Voltage :
- 80V
- Rise Time :
- 8ns
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 2.5W
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Weight :
- 130mg
- Number of Terminations :
- 8
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 11 Weeks
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 7.6A
- Number of Pins :
- 8
- Pbfree Code :
- yes
- Vgs (Max) :
- ±20V
- Lead Free :
- Lead Free
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Published :
- 2000
- Current Rating :
- 7.6A
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 1800pF @ 25V
- Voltage - Rated DC :
- 80V
- Terminal Finish :
- Tin (Sn)
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Current - Continuous Drain (Id) @ 25°C :
- 7.6A Ta
- Length :
- 4.9mm
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max :
- 2.5W Ta
- Series :
- PowerTrench®
- Resistance :
- 29mOhm
- Element Configuration :
- Single
- Width :
- 3.9mm
- Terminal Position :
- Dual
- Gate Charge (Qg) (Max) @ Vgs :
- 46nC @ 10V
- JESD-609 Code :
- e3
- Datasheets
- FDS3580

N-Channel Tape & Reel (TR) 29m Ω @ 7.6A, 10V ±20V 1800pF @ 25V 46nC @ 10V 8-SOIC (0.154, 3.90mm Width)
FDS3580 Description
The N-channel MOSFET is designed to improve the overall efficiency of DC/DC converters using synchronous or conventional switching PWM controllers. Compared with other MOSFET with similar R DS specifications, these MOSFET have faster switching speed and lower gate charge. The result is an easy-to-drive and safer MOSFET (even at very high frequencies) and a DC/DC power design with higher overall efficiency.
FDS3580 Features
7.6 A, 80 V.
RDS(ON ) = 0.029 Ω @ VGS = 10 V
RDS(ON) = 0.033 Ω @ VGS = 6 V.
Low gate charge (34nC typical).
Fast switching speed.
High performance trench technology for extremely low RDS(ON).
High power and current handling capability.
FDS3580 Applications
This product is general usage and suitable for many different applications.
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