FDS3580
- Mfr.Part #
- FDS3580
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- SMALL SIGNAL FIELD-EFFECT TRANSI
- Stock
- 437
- In Stock :
- 437
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 8ns
- Power Dissipation :
- 2.5W
- Voltage - Rated DC :
- 80V
- Series :
- PowerTrench®
- Length :
- 4.9mm
- RoHS Status :
- ROHS3 Compliant
- Height :
- 1.575mm
- Drain to Source Breakdown Voltage :
- 80V
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Published :
- 2000
- Power Dissipation-Max :
- 2.5W Ta
- ECCN Code :
- EAR99
- Terminal Position :
- Dual
- Factory Lead Time :
- 11 Weeks
- Continuous Drain Current (ID) :
- 7.6A
- Vgs (Max) :
- ±20V
- Mounting Type :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Turn On Delay Time :
- 13 ns
- Radiation Hardening :
- No
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 8
- Current - Continuous Drain (Id) @ 25°C :
- 7.6A Ta
- Input Capacitance (Ciss) (Max) @ Vds :
- 1800pF @ 25V
- Number of Pins :
- 8
- Gate to Source Voltage (Vgs) :
- 20V
- Resistance :
- 29mOhm
- Weight :
- 130mg
- Terminal Form :
- Gull wing
- Gate Charge (Qg) (Max) @ Vgs :
- 46nC @ 10V
- Width :
- 3.9mm
- Mount :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e3
- Terminal Finish :
- Tin (Sn)
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Fall Time (Typ) :
- 16 ns
- Current Rating :
- 7.6A
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 34 ns
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Rds On (Max) @ Id, Vgs :
- 29m Ω @ 7.6A, 10V
- FET Type :
- N-Channel
- Transistor Application :
- SWITCHING
- Datasheets
- FDS3580

N-Channel Tape & Reel (TR) 29m Ω @ 7.6A, 10V ±20V 1800pF @ 25V 46nC @ 10V 8-SOIC (0.154, 3.90mm Width)
FDS3580 Description
The N-channel MOSFET is designed to improve the overall efficiency of DC/DC converters using synchronous or conventional switching PWM controllers. Compared with other MOSFET with similar R DS specifications, these MOSFET have faster switching speed and lower gate charge. The result is an easy-to-drive and safer MOSFET (even at very high frequencies) and a DC/DC power design with higher overall efficiency.
FDS3580 Features
7.6 A, 80 V.
RDS(ON ) = 0.029 Ω @ VGS = 10 V
RDS(ON) = 0.033 Ω @ VGS = 6 V.
Low gate charge (34nC typical).
Fast switching speed.
High performance trench technology for extremely low RDS(ON).
High power and current handling capability.
FDS3580 Applications
This product is general usage and suitable for many different applications.
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