FDS3170N7

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

yes

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Power Dissipation-Max :

3W Ta

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

6.7A

Series :

PowerTrench®

Current - Continuous Drain (Id) @ 25°C :

6.7A Ta

Drain to Source Voltage (Vdss) :

100V

Qualification Status :

COMMERCIAL

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

60A

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

2.714pF @ 50V

Operating Mode :

ENHANCEMENT MODE

Pin Count :

8

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

26m Ω @ 6.7A, 10V

Reach Compliance Code :

Unknown

JESD-609 Code :

e4

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

NICKEL PALLADIUM GOLD

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Terminations :

8

JESD-30 Code :

R-PDSO-G8

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

260

Case Connection :

DRAIN

FET Type :

N-Channel

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

77nC @ 10V

DS Breakdown Voltage-Min :

100V

Terminal Form :

Gull wing

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Avalanche Energy Rating (Eas) :

360 mJ

Drain-source On Resistance-Max :

0.026ohm