FDPC8016S

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Channels :

2

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Package / Case :

8-PowerWDFN

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Weight :

207.7333mg

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Input Capacitance (Ciss) (Max) @ Vds :

2375pF @ 13V

Width :

6.1mm

Element Configuration :

Dual

Pulsed Drain Current-Max (IDM) :

75A

Continuous Drain Current (ID) :

100A

Rds On (Max) @ Id, Vgs :

3.8m Ω @ 20A, 10V

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

FET Feature :

Logic Level Gate

FET Type :

2 N-Channel (Dual) Asymmetrical

Turn-Off Delay Time :

38 ns

Pbfree Code :

yes

Number of Elements :

2

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

PowerTrench®

Drain to Source Breakdown Voltage :

25V

Length :

5.1mm

Terminal Form :

NO LEAD

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power - Max :

2.1W 2.3W

Mount :

Surface Mount

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

73 mJ

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

12V

JESD-609 Code :

e3

Fall Time (Typ) :

3 ns

Packaging :

Tape and Reel (TR)

Terminal Finish :

Tin (Sn)

Turn On Delay Time :

13 ns

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

20A 35A

Transistor Element Material :

SILICON

Reach Compliance Code :

not_compliant

Number of Terminations :

8

Height :

750μm

Number of Pins :

8

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

Factory Lead Time :

23 Weeks

Rise Time :

4ns

Max Power Dissipation :

42W