FDPC8016S

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Mount :

Surface Mount

Case Connection :

DRAIN

Factory Lead Time :

23 Weeks

Height :

750μm

Series :

PowerTrench®

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Continuous Drain Current (ID) :

100A

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Package / Case :

8-PowerWDFN

Turn-Off Delay Time :

38 ns

Input Capacitance (Ciss) (Max) @ Vds :

2375pF @ 13V

Terminal Finish :

Tin (Sn)

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

42W

Width :

6.1mm

Drain to Source Breakdown Voltage :

25V

Terminal Form :

NO LEAD

Element Configuration :

Dual

Avalanche Energy Rating (Eas) :

73 mJ

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

3 ns

Rise Time :

4ns

Length :

5.1mm

Power - Max :

2.1W 2.3W

Number of Elements :

2

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

12V

Turn On Delay Time :

13 ns

Rds On (Max) @ Id, Vgs :

3.8m Ω @ 20A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Weight :

207.7333mg

Number of Terminations :

8

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Channels :

2

Pulsed Drain Current-Max (IDM) :

75A

Reach Compliance Code :

not_compliant

Number of Pins :

8

Current - Continuous Drain (Id) @ 25°C :

20A 35A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Feature :

Logic Level Gate

Pbfree Code :

yes

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

FET Type :

2 N-Channel (Dual) Asymmetrical

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ