FDPC8014S
- Mfr.Part #
- FDPC8014S
- Manufacturer
- onsemi
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- MOSFET 2N-CH 25V 8PWRCLIP
- Stock
- 14,815
- In Stock :
- 14,815
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Max Power Dissipation :
- 2.3W
- Continuous Drain Current (ID) :
- 41A
- Power - Max :
- 2.1W 2.3W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Length :
- 5.1mm
- JESD-609 Code :
- e3
- Input Capacitance (Ciss) (Max) @ Vds :
- 2375pF @ 13V
- ECCN Code :
- EAR99
- Number of Terminations :
- 8
- Mount :
- Surface Mount
- Pulsed Drain Current-Max (IDM) :
- 75A
- Height :
- 750μm
- Pbfree Code :
- yes
- Rise Time :
- 6ns
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 3.8m Ω @ 20A, 10V
- Contact Plating :
- Tin
- FET Feature :
- Logic Level Gate
- Case Connection :
- DRAIN
- Avalanche Energy Rating (Eas) :
- 73 mJ
- Width :
- 6.1mm
- Gate Charge (Qg) (Max) @ Vgs :
- 35nC @ 10V
- Transistor Application :
- SWITCHING
- Terminal Form :
- NO LEAD
- Reach Compliance Code :
- not_compliant
- Turn-Off Delay Time :
- 47 ns
- Number of Pins :
- 8
- Published :
- 2017
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 2
- Package / Case :
- 8-PowerWDFN
- Drain Current-Max (Abs) (ID) :
- 110A
- FET Type :
- 2 N-Channel (Dual) Asymmetrical
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain to Source Voltage (Vdss) :
- 25V
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- 12V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Factory Lead Time :
- 23 Weeks
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Packaging :
- Tape and Reel (TR)
- Weight :
- 207.7333mg
- Series :
- PowerTrench®
- Operating Temperature :
- -55°C~150°C TJ
- Fall Time (Typ) :
- 4 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Current - Continuous Drain (Id) @ 25°C :
- 20A 41A
- Turn On Delay Time :
- 16 ns
- Number of Channels :
- 2
- Datasheets
- FDPC8014S
FDPC8014S Documents
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FDPC8014S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDPC8014S Description
The device includes two specialized N-channel MOSFET in the dual package. The switch nodes are connected internally for easy placement and wiring of synchronous step-down converters. The control of MOSFET (Q1) and synchronous SyncFETTM devices (Q2) is designed to provide optimal power efficiency.
FDPC8014S Features
Q1 N-Channel
Max. RDS(on) = 3.8 m|? at VGS = 10 V, ID = 20 A
Max. RDS(on) = 4.7 m|? at VGS = 4.5 V, ID = 18 A
Q2 N-Channel
Max. RDS(on) = 1.2 m|? at VGS = 10 V, ID = 41 A
Max. RDS(on) = 1.4 m|? at VGS = 4.5 V, ID = 37 A
Low inductance packaging shortens rise/fall times, resulting in lower switching losses
MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
RoHS Compliant
FDPC8014S Applications
Computing
Communications
General Purpose Point of Load
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