FDPC8011S
- Mfr.Part #
- FDPC8011S
- Manufacturer
- onsemi
- Package / Case
- Datasheet
- Download
- Description
- MOSFET 2N-CH 25V 13A/27A 8PQFN
- Stock
- 3,000
- In Stock :
- 3,000
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Terminal Finish :
- Tin (Sn)
- Drain to Source Breakdown Voltage :
- 25V
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Element Configuration :
- Dual
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- Number of Pins :
- 8
- Lead Free :
- Lead Free
- REACH SVHC :
- No SVHC
- Length :
- 3.4mm
- Min Operating Temperature :
- -55°C
- Factory Lead Time :
- 12 Weeks
- Rise Time :
- 5ns
- Rds On Max :
- 6 mΩ
- Threshold Voltage :
- 1.4V
- Fall Time (Typ) :
- 4 ns
- Transistor Application :
- SWITCHING
- Input Capacitance :
- 1.24nF
- Drain to Source Resistance :
- 1.2mOhm
- Gate to Source Voltage (Vgs) :
- 12V
- Power Dissipation :
- 2W
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Operating Mode :
- ENHANCEMENT MODE
- Nominal Vgs :
- 1.4 V
- Pbfree Code :
- yes
- Turn-Off Delay Time :
- 38 ns
- Width :
- 3.4mm
- Weight :
- 192mg
- Polarity/Channel Type :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Max Operating Temperature :
- 150°C
- Height :
- 800μm
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Number of Elements :
- 2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 900mW
- Number of Terminations :
- 8
- Drain Current-Max (Abs) (ID) :
- 13A
- Drain to Source Voltage (Vdss) :
- 25V
- JESD-609 Code :
- e3
- Continuous Drain Current (ID) :
- 27A
- Datasheets
- FDPC8011S

FDPC8011S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDPC8011S Description
The device includes two specialized N-channel MOSFET in the dual package. The switch nodes are connected internally for easy placement and wiring of synchronous step-down converters. The control of MOSFET (Q1) and synchronous FET (Q2) is designed to provide optimal power efficiency.
FDPC8011S Features
Q1 N-Channel
Max. RDS(on) = 7.3 m|? at VGS = 4.5 V, ID = 12 A
Q2 N-Channel
Max. RDS(on) = 2.1 m|? at VGS = 4.5 V, ID = 12 A
Low inductance packaging shortens rise/fall times, resulting in lower switching losses
MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
RoHS Compliant
FDPC8011S Applications
Server
Computing
Communications
General Purpose Point of Load
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