FDPC8011S

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Mfr.Part #
FDPC8011S
Manufacturer
onsemi
Package / Case
Datasheet
Download
Description
MOSFET 2N-CH 25V 13A/27A 8PQFN
Stock
3,000
In Stock :
3,000

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Arrays
Min Operating Temperature :
-55°C
Number of Pins :
8
Terminal Finish :
Tin (Sn)
Transistor Application :
SWITCHING
Weight :
192mg
REACH SVHC :
No SVHC
JESD-609 Code :
e3
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Fall Time (Typ) :
4 ns
Rise Time :
5ns
Power Dissipation :
2W
Length :
3.4mm
RoHS Status :
ROHS3 Compliant
Width :
3.4mm
ECCN Code :
EAR99
Height :
800μm
Continuous Drain Current (ID) :
27A
Threshold Voltage :
1.4V
Factory Lead Time :
12 Weeks
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Polarity/Channel Type :
N-Channel
Max Power Dissipation :
900mW
Gate to Source Voltage (Vgs) :
12V
Drain to Source Resistance :
1.2mOhm
Element Configuration :
Dual
Lead Free :
Lead Free
Pbfree Code :
yes
Drain to Source Voltage (Vdss) :
25V
Radiation Hardening :
No
Max Operating Temperature :
150°C
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Packaging :
Tape and Reel (TR)
Operating Mode :
ENHANCEMENT MODE
Number of Elements :
2
Nominal Vgs :
1.4 V
Input Capacitance :
1.24nF
Mount :
Surface Mount
Number of Terminations :
8
Drain Current-Max (Abs) (ID) :
13A
Turn-Off Delay Time :
38 ns
Drain to Source Breakdown Voltage :
25V
Rds On Max :
6 mΩ
Datasheets
FDPC8011S
Introducing Transistors - FETs, MOSFETs - Arrays onsemi FDPC8011S from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:8, Number of Terminations:8, FDPC8011S pinout, FDPC8011S datasheet PDF, FDPC8011S amp .Beyond Transistors - FETs, MOSFETs - Arrays onsemi FDPC8011S ,we also offer SSM6N57NU,LF, DMN2004DMK-7, AO4629, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDPC8011S


FDPC8011S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at

FDPC8011S          Description


  The device includes two specialized N-channel MOSFET in the dual package. The switch nodes are connected internally for easy placement and wiring of synchronous step-down converters. The control of MOSFET (Q1) and synchronous FET (Q2) is designed to provide optimal power efficiency.


FDPC8011S     Features

 

Q1 N-Channel

Max. RDS(on) = 7.3 m|? at VGS = 4.5 V, ID = 12 A

Q2 N-Channel

Max. RDS(on) = 2.1 m|? at VGS = 4.5 V, ID = 12 A

Low inductance packaging shortens rise/fall times, resulting in lower switching losses

MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing

RoHS Compliant


FDPC8011S                 Applications 


Server

Computing

Communications

General Purpose Point of Load

 

 



 



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