FDPC8011S

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Input Capacitance :

1.24nF

Drain to Source Resistance :

1.2mOhm

JESD-609 Code :

e3

Width :

3.4mm

Fall Time (Typ) :

4 ns

Rds On Max :

6 mΩ

Number of Pins :

8

Gate to Source Voltage (Vgs) :

12V

Rise Time :

5ns

Terminal Finish :

Tin (Sn)

Radiation Hardening :

No

Max Operating Temperature :

150°C

Height :

800μm

Weight :

192mg

Drain to Source Breakdown Voltage :

25V

Drain Current-Max (Abs) (ID) :

13A

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Number of Elements :

2

Drain to Source Voltage (Vdss) :

25V

Number of Terminations :

8

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

900mW

Polarity/Channel Type :

N-Channel

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Factory Lead Time :

12 Weeks

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Min Operating Temperature :

-55°C

Threshold Voltage :

1.4V

Lead Free :

Lead Free

Mount :

Surface Mount

Nominal Vgs :

1.4 V

Continuous Drain Current (ID) :

27A

Transistor Application :

SWITCHING

Length :

3.4mm

Element Configuration :

Dual

Turn-Off Delay Time :

38 ns

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

2W

FET Technology :

METAL-OXIDE SEMICONDUCTOR