FDPC8011S

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Mfr.Part #
FDPC8011S
Manufacturer
onsemi
Package / Case
Datasheet
Download
Description
MOSFET 2N-CH 25V 13A/27A 8PQFN
Stock
3,000
In Stock :
3,000

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Arrays
Mount :
Surface Mount
Length :
3.4mm
Lead Free :
Lead Free
Nominal Vgs :
1.4 V
JESD-609 Code :
e3
Number of Pins :
8
Power Dissipation :
2W
Weight :
192mg
Pbfree Code :
yes
Drain Current-Max (Abs) (ID) :
13A
Operating Mode :
ENHANCEMENT MODE
Gate to Source Voltage (Vgs) :
12V
Drain to Source Resistance :
1.2mOhm
Number of Terminations :
8
Rise Time :
5ns
REACH SVHC :
No SVHC
ECCN Code :
EAR99
Element Configuration :
Dual
Packaging :
Tape and Reel (TR)
Fall Time (Typ) :
4 ns
Transistor Application :
SWITCHING
Factory Lead Time :
12 Weeks
Threshold Voltage :
1.4V
Drain to Source Voltage (Vdss) :
25V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Input Capacitance :
1.24nF
Min Operating Temperature :
-55°C
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Width :
3.4mm
Turn-Off Delay Time :
38 ns
Number of Elements :
2
Drain to Source Breakdown Voltage :
25V
Rds On Max :
6 mΩ
Height :
800μm
Max Power Dissipation :
900mW
Radiation Hardening :
No
Polarity/Channel Type :
N-Channel
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Continuous Drain Current (ID) :
27A
Max Operating Temperature :
150°C
Terminal Finish :
Tin (Sn)
RoHS Status :
ROHS3 Compliant
Datasheets
FDPC8011S
Introducing Transistors - FETs, MOSFETs - Arrays onsemi FDPC8011S from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:8, Number of Terminations:8, FDPC8011S pinout, FDPC8011S datasheet PDF, FDPC8011S amp .Beyond Transistors - FETs, MOSFETs - Arrays onsemi FDPC8011S ,we also offer SSM6N57NU,LF, DMN2004DMK-7, AO4629, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDPC8011S


FDPC8011S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at

FDPC8011S          Description


  The device includes two specialized N-channel MOSFET in the dual package. The switch nodes are connected internally for easy placement and wiring of synchronous step-down converters. The control of MOSFET (Q1) and synchronous FET (Q2) is designed to provide optimal power efficiency.


FDPC8011S     Features

 

Q1 N-Channel

Max. RDS(on) = 7.3 m|? at VGS = 4.5 V, ID = 12 A

Q2 N-Channel

Max. RDS(on) = 2.1 m|? at VGS = 4.5 V, ID = 12 A

Low inductance packaging shortens rise/fall times, resulting in lower switching losses

MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing

RoHS Compliant


FDPC8011S                 Applications 


Server

Computing

Communications

General Purpose Point of Load

 

 



 



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