FDPC8011S
- Mfr.Part #
- FDPC8011S
- Manufacturer
- onsemi
- Package / Case
- Datasheet
- Download
- Description
- MOSFET 2N-CH 25V 13A/27A 8PQFN
- Stock
- 3,000
- In Stock :
- 3,000
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Drain to Source Resistance :
- 1.2mOhm
- Max Operating Temperature :
- 150°C
- JESD-609 Code :
- e3
- Mount :
- Surface Mount
- Power Dissipation :
- 2W
- Weight :
- 192mg
- Gate to Source Voltage (Vgs) :
- 12V
- Element Configuration :
- Dual
- REACH SVHC :
- No SVHC
- Rise Time :
- 5ns
- Height :
- 800μm
- Number of Terminations :
- 8
- Input Capacitance :
- 1.24nF
- Polarity/Channel Type :
- N-Channel
- Factory Lead Time :
- 12 Weeks
- Min Operating Temperature :
- -55°C
- Drain to Source Voltage (Vdss) :
- 25V
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 2
- Fall Time (Typ) :
- 4 ns
- Pbfree Code :
- yes
- Number of Pins :
- 8
- Rds On Max :
- 6 mΩ
- Continuous Drain Current (ID) :
- 27A
- Turn-Off Delay Time :
- 38 ns
- Drain Current-Max (Abs) (ID) :
- 13A
- Length :
- 3.4mm
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Threshold Voltage :
- 1.4V
- Width :
- 3.4mm
- Nominal Vgs :
- 1.4 V
- Drain to Source Breakdown Voltage :
- 25V
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 900mW
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Lead Free :
- Lead Free
- Terminal Finish :
- Tin (Sn)
- Datasheets
- FDPC8011S

FDPC8011S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDPC8011S Description
The device includes two specialized N-channel MOSFET in the dual package. The switch nodes are connected internally for easy placement and wiring of synchronous step-down converters. The control of MOSFET (Q1) and synchronous FET (Q2) is designed to provide optimal power efficiency.
FDPC8011S Features
Q1 N-Channel
Max. RDS(on) = 7.3 m|? at VGS = 4.5 V, ID = 12 A
Q2 N-Channel
Max. RDS(on) = 2.1 m|? at VGS = 4.5 V, ID = 12 A
Low inductance packaging shortens rise/fall times, resulting in lower switching losses
MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
RoHS Compliant
FDPC8011S Applications
Server
Computing
Communications
General Purpose Point of Load
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