FDPC8011S

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Mfr.Part #
FDPC8011S
Manufacturer
onsemi
Package / Case
Datasheet
Download
Description
MOSFET 2N-CH 25V 13A/27A 8PQFN
Stock
3,000
In Stock :
3,000

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Arrays
Drain to Source Resistance :
1.2mOhm
Max Operating Temperature :
150°C
JESD-609 Code :
e3
Mount :
Surface Mount
Power Dissipation :
2W
Weight :
192mg
Gate to Source Voltage (Vgs) :
12V
Element Configuration :
Dual
REACH SVHC :
No SVHC
Rise Time :
5ns
Height :
800μm
Number of Terminations :
8
Input Capacitance :
1.24nF
Polarity/Channel Type :
N-Channel
Factory Lead Time :
12 Weeks
Min Operating Temperature :
-55°C
Drain to Source Voltage (Vdss) :
25V
Radiation Hardening :
No
Packaging :
Tape and Reel (TR)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Mode :
ENHANCEMENT MODE
Number of Elements :
2
Fall Time (Typ) :
4 ns
Pbfree Code :
yes
Number of Pins :
8
Rds On Max :
6 mΩ
Continuous Drain Current (ID) :
27A
Turn-Off Delay Time :
38 ns
Drain Current-Max (Abs) (ID) :
13A
Length :
3.4mm
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Threshold Voltage :
1.4V
Width :
3.4mm
Nominal Vgs :
1.4 V
Drain to Source Breakdown Voltage :
25V
Transistor Application :
SWITCHING
Max Power Dissipation :
900mW
ECCN Code :
EAR99
RoHS Status :
ROHS3 Compliant
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Lead Free :
Lead Free
Terminal Finish :
Tin (Sn)
Datasheets
FDPC8011S
Introducing Transistors - FETs, MOSFETs - Arrays onsemi FDPC8011S from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:8, Number of Pins:8, FDPC8011S pinout, FDPC8011S datasheet PDF, FDPC8011S amp .Beyond Transistors - FETs, MOSFETs - Arrays onsemi FDPC8011S ,we also offer SSM6N57NU,LF, DMN2004DMK-7, AO4629, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDPC8011S


FDPC8011S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at

FDPC8011S          Description


  The device includes two specialized N-channel MOSFET in the dual package. The switch nodes are connected internally for easy placement and wiring of synchronous step-down converters. The control of MOSFET (Q1) and synchronous FET (Q2) is designed to provide optimal power efficiency.


FDPC8011S     Features

 

Q1 N-Channel

Max. RDS(on) = 7.3 m|? at VGS = 4.5 V, ID = 12 A

Q2 N-Channel

Max. RDS(on) = 2.1 m|? at VGS = 4.5 V, ID = 12 A

Low inductance packaging shortens rise/fall times, resulting in lower switching losses

MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing

RoHS Compliant


FDPC8011S                 Applications 


Server

Computing

Communications

General Purpose Point of Load

 

 



 



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