FDPC8012S
- Mfr.Part #
- FDPC8012S
- Manufacturer
- onsemi
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- MOSFET 2N-CH 25V 13A/26A PWR CLP
- Stock
- 4
- In Stock :
- 4
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Max Power Dissipation :
- 2W
- Input Capacitance (Ciss) (Max) @ Vds :
- 1075pF @ 13V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Factory Lead Time :
- 12 Weeks
- Series :
- PowerTrench®
- FET Feature :
- Logic Level Gate
- Rds On (Max) @ Id, Vgs :
- 7m Ω @ 12A, 4.5V
- Operating Temperature :
- -55°C~150°C TJ
- Radiation Hardening :
- No
- Drain Current-Max (Abs) (ID) :
- 13A
- Fall Time (Typ) :
- 3 ns
- Power - Max :
- 800mW 900mW
- Rise Time :
- 3ns
- Terminal Finish :
- Tin (Sn)
- Configuration :
- SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
- Drain to Source Breakdown Voltage :
- 25V
- Pbfree Code :
- yes
- Vgs(th) (Max) @ Id :
- 2.2V @ 250µA
- Number of Terminations :
- 8
- Published :
- 2010
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Package / Case :
- 8-PowerWDFN
- Current - Continuous Drain (Id) @ 25°C :
- 13A 26A
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- ECCN Code :
- EAR99
- Number of Pins :
- 8
- Gate Charge (Qg) (Max) @ Vgs :
- 8nC @ 4.5V
- Gate to Source Voltage (Vgs) :
- 12V
- Transistor Application :
- SWITCHING
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- 88A
- Weight :
- 192mg
- Drain-source On Resistance-Max :
- 0.007Ohm
- Width :
- 3.3mm
- Turn-Off Delay Time :
- 34 ns
- JESD-609 Code :
- e3
- FET Type :
- 2 N-Channel (Dual) Asymmetrical
- Number of Elements :
- 2
- Height :
- 725μm
- JEDEC-95 Code :
- MO-240BA
- Transistor Element Material :
- SILICON
- Length :
- 3.3mm
- Packaging :
- Tape and Reel (TR)
- Datasheets
- FDPC8012S

FDPC8012S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDPC8012S Description
The device includes two specialized N-channel MOSFET in the dual package. The switch nodes are connected internally for easy placement and wiring of synchronous step-down converters. The control of MOSFET (Q1) and synchronous FET (Q2) is designed to provide optimal power efficiency.
FDPC8012S Features
Q1 N-Channel
Max. RDS(on) = 7.0 m|? at VGS = 4.5 V, ID = 12 A
Q2 N-Channel
Max. RDS(on) = 2.2 m|? at VGS = 4.5 V, ID = 23 A
Low inductance packaging shortens rise/fall times, resulting in lower switching losses
MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
RoHS Compliant
FDPC8012S Applications
Server
Computing
Communications
General Purpose Point of Load
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