FDPC8012S

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Element Material :

SILICON

Configuration :

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

Power - Max :

800mW 900mW

Weight :

192mg

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Rise Time :

3ns

Height :

725μm

Width :

3.3mm

Current - Continuous Drain (Id) @ 25°C :

13A 26A

Drain Current-Max (Abs) (ID) :

13A

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

1075pF @ 13V

Operating Mode :

ENHANCEMENT MODE

JEDEC-95 Code :

MO-240BA

ECCN Code :

EAR99

Continuous Drain Current (ID) :

88A

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Rds On (Max) @ Id, Vgs :

7m Ω @ 12A, 4.5V

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

3 ns

Turn-Off Delay Time :

34 ns

Number of Terminations :

8

Drain-source On Resistance-Max :

0.007Ohm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate to Source Voltage (Vgs) :

12V

Radiation Hardening :

No

Mounting Type :

Surface Mount

Number of Elements :

2

Packaging :

Tape and Reel (TR)

Package / Case :

8-PowerWDFN

Mount :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Factory Lead Time :

12 Weeks

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 4.5V

Number of Pins :

8

Length :

3.3mm

Published :

2010

Max Power Dissipation :

2W

Pbfree Code :

yes

Terminal Finish :

Tin (Sn)

FET Feature :

Logic Level Gate

Drain to Source Breakdown Voltage :

25V

FET Type :

2 N-Channel (Dual) Asymmetrical

Series :

PowerTrench®