FDPC8012S

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

JESD-609 Code :

e3

Max Power Dissipation :

2W

Terminal Finish :

Tin (Sn)

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Package / Case :

8-PowerWDFN

Turn-Off Delay Time :

34 ns

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Continuous Drain Current (ID) :

88A

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

8nC @ 4.5V

Width :

3.3mm

Packaging :

Tape and Reel (TR)

Published :

2010

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Factory Lead Time :

12 Weeks

Drain Current-Max (Abs) (ID) :

13A

Length :

3.3mm

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Configuration :

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

FET Type :

2 N-Channel (Dual) Asymmetrical

Number of Pins :

8

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Current - Continuous Drain (Id) @ 25°C :

13A 26A

Drain-source On Resistance-Max :

0.007Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Number of Elements :

2

Input Capacitance (Ciss) (Max) @ Vds :

1075pF @ 13V

Power - Max :

800mW 900mW

Rds On (Max) @ Id, Vgs :

7m Ω @ 12A, 4.5V

Rise Time :

3ns

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

25V

Series :

PowerTrench®

Fall Time (Typ) :

3 ns

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Height :

725μm

Weight :

192mg

JEDEC-95 Code :

MO-240BA

Number of Terminations :

8

Gate to Source Voltage (Vgs) :

12V

FET Feature :

Logic Level Gate