FDPC8013S

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Mfr.Part #
FDPC8013S
Manufacturer
onsemi
Package / Case
8-PowerWDFN
Datasheet
Download
Description
MOSFET 2N-CH 30V 13A/26A 3.3MM
Stock
5,056
In Stock :
5,056

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Arrays
Series :
PowerTrench®
Continuous Drain Current (ID) :
55A
Mount :
Surface Mount
Factory Lead Time :
12 Weeks
Max Power Dissipation :
2W
Turn-Off Delay Time :
30 ns
Gate to Source Voltage (Vgs) :
20V
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
FET Feature :
Logic Level Gate
Element Configuration :
Dual
Threshold Voltage :
1.7V
Width :
3.4mm
Radiation Hardening :
No
Height :
750μm
Fall Time (Typ) :
4 ns
Length :
3.4mm
Current - Continuous Drain (Id) @ 25°C :
13A 26A
FET Technology :
METAL-OXIDE SEMICONDUCTOR
ECCN Code :
EAR99
Operating Temperature :
-55°C~150°C TJ
Turn On Delay Time :
6 ns
Package / Case :
8-PowerWDFN
Nominal Vgs :
1.7 V
Packaging :
Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds :
827pF @ 15V
Lead Free :
Lead Free
Power Dissipation :
2W
Gate Charge (Qg) (Max) @ Vgs :
13nC @ 10V
Power - Max :
800mW 900mW
Number of Elements :
2
Drain to Source Breakdown Voltage :
30V
Rise Time :
5ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Finish :
Tin (Sn)
Mounting Type :
Surface Mount
Pbfree Code :
yes
Vgs(th) (Max) @ Id :
3V @ 250µA
Rds On (Max) @ Id, Vgs :
6.4m Ω @ 13A, 10V
Published :
2009
Number of Pins :
8
JESD-609 Code :
e3
FET Type :
2 N-Channel (Dual)
REACH SVHC :
No SVHC
Weight :
192mg
RoHS Status :
ROHS3 Compliant
Introducing Transistors - FETs, MOSFETs - Arrays onsemi FDPC8013S from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:8-PowerWDFN, Mounting Type:Surface Mount, Number of Pins:8, FDPC8013S pinout, FDPC8013S datasheet PDF, FDPC8013S amp .Beyond Transistors - FETs, MOSFETs - Arrays onsemi FDPC8013S ,we also offer SSM6N57NU,LF, DMN2004DMK-7, AO4629, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDPC8013S


FDPC8013S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at

FDPC8013S       Description


  The device includes two specialized N-channel MOSFET in the dual package. The switch nodes are connected internally for easy placement and wiring of synchronous step-down converters. The control of MOSFET (Q1) and synchronous field effect transistor (Q2) is designed to provide optimal power efficiency.


FDPC8013S      Features

 

Q1 N-Channel

Max. RDS(on) = 9.6 m|? at VGS = 4.5 V, ID = 10 A

Q2 N-Channel

Max. RDS(on) = 2.7 m|? at VGS = 4.5 V, ID = 22 A

Low inductance packaging shortens rise/fall times, resulting in lower switching losses

MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing

RoHS Compliant


FDPC8013S             Applications


Distribution

Other Wired Communications

Computing

Communications

General Purpose Point of Load

 

 

 





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