FDPC8013S

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Mfr.Part #
FDPC8013S
Manufacturer
onsemi
Package / Case
8-PowerWDFN
Datasheet
Download
Description
MOSFET 2N-CH 30V 13A/26A 3.3MM
Stock
5,056
In Stock :
5,056

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Arrays
Height :
750μm
FET Type :
2 N-Channel (Dual)
REACH SVHC :
No SVHC
Length :
3.4mm
Current - Continuous Drain (Id) @ 25°C :
13A 26A
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Input Capacitance (Ciss) (Max) @ Vds :
827pF @ 15V
Continuous Drain Current (ID) :
55A
ECCN Code :
EAR99
Threshold Voltage :
1.7V
Element Configuration :
Dual
Mount :
Surface Mount
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs(th) (Max) @ Id :
3V @ 250µA
JESD-609 Code :
e3
Published :
2009
Fall Time (Typ) :
4 ns
Rds On (Max) @ Id, Vgs :
6.4m Ω @ 13A, 10V
Power Dissipation :
2W
Number of Elements :
2
Nominal Vgs :
1.7 V
Max Power Dissipation :
2W
Factory Lead Time :
12 Weeks
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Packaging :
Digi-Reel®
Terminal Finish :
Tin (Sn)
Turn On Delay Time :
6 ns
Drain to Source Breakdown Voltage :
30V
Package / Case :
8-PowerWDFN
Lead Free :
Lead Free
Width :
3.4mm
Operating Temperature :
-55°C~150°C TJ
Radiation Hardening :
No
Turn-Off Delay Time :
30 ns
Gate Charge (Qg) (Max) @ Vgs :
13nC @ 10V
Gate to Source Voltage (Vgs) :
20V
Power - Max :
800mW 900mW
Pbfree Code :
yes
Number of Pins :
8
Rise Time :
5ns
RoHS Status :
ROHS3 Compliant
FET Feature :
Logic Level Gate
Weight :
192mg
Mounting Type :
Surface Mount
Series :
PowerTrench®
Datasheets
FDPC8013S
Introducing Transistors - FETs, MOSFETs - Arrays onsemi FDPC8013S from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:8-PowerWDFN, Operating Temperature:-55°C~150°C TJ, Number of Pins:8, Mounting Type:Surface Mount, FDPC8013S pinout, FDPC8013S datasheet PDF, FDPC8013S amp .Beyond Transistors - FETs, MOSFETs - Arrays onsemi FDPC8013S ,we also offer SSM6N57NU,LF, DMN2004DMK-7, AO4629, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDPC8013S


FDPC8013S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at

FDPC8013S       Description


  The device includes two specialized N-channel MOSFET in the dual package. The switch nodes are connected internally for easy placement and wiring of synchronous step-down converters. The control of MOSFET (Q1) and synchronous field effect transistor (Q2) is designed to provide optimal power efficiency.


FDPC8013S      Features

 

Q1 N-Channel

Max. RDS(on) = 9.6 m|? at VGS = 4.5 V, ID = 10 A

Q2 N-Channel

Max. RDS(on) = 2.7 m|? at VGS = 4.5 V, ID = 22 A

Low inductance packaging shortens rise/fall times, resulting in lower switching losses

MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing

RoHS Compliant


FDPC8013S             Applications


Distribution

Other Wired Communications

Computing

Communications

General Purpose Point of Load

 

 

 





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