FDPC8013S
- Mfr.Part #
- FDPC8013S
- Manufacturer
- onsemi
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- MOSFET 2N-CH 30V 13A/26A 3.3MM
- Stock
- 5,056
- In Stock :
- 5,056
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Height :
- 750μm
- FET Type :
- 2 N-Channel (Dual)
- REACH SVHC :
- No SVHC
- Length :
- 3.4mm
- Current - Continuous Drain (Id) @ 25°C :
- 13A 26A
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Input Capacitance (Ciss) (Max) @ Vds :
- 827pF @ 15V
- Continuous Drain Current (ID) :
- 55A
- ECCN Code :
- EAR99
- Threshold Voltage :
- 1.7V
- Element Configuration :
- Dual
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- JESD-609 Code :
- e3
- Published :
- 2009
- Fall Time (Typ) :
- 4 ns
- Rds On (Max) @ Id, Vgs :
- 6.4m Ω @ 13A, 10V
- Power Dissipation :
- 2W
- Number of Elements :
- 2
- Nominal Vgs :
- 1.7 V
- Max Power Dissipation :
- 2W
- Factory Lead Time :
- 12 Weeks
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Packaging :
- Digi-Reel®
- Terminal Finish :
- Tin (Sn)
- Turn On Delay Time :
- 6 ns
- Drain to Source Breakdown Voltage :
- 30V
- Package / Case :
- 8-PowerWDFN
- Lead Free :
- Lead Free
- Width :
- 3.4mm
- Operating Temperature :
- -55°C~150°C TJ
- Radiation Hardening :
- No
- Turn-Off Delay Time :
- 30 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 13nC @ 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Power - Max :
- 800mW 900mW
- Pbfree Code :
- yes
- Number of Pins :
- 8
- Rise Time :
- 5ns
- RoHS Status :
- ROHS3 Compliant
- FET Feature :
- Logic Level Gate
- Weight :
- 192mg
- Mounting Type :
- Surface Mount
- Series :
- PowerTrench®
- Datasheets
- FDPC8013S

FDPC8013S datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDPC8013S Description
The device includes two specialized N-channel MOSFET in the dual package. The switch nodes are connected internally for easy placement and wiring of synchronous step-down converters. The control of MOSFET (Q1) and synchronous field effect transistor (Q2) is designed to provide optimal power efficiency.
FDPC8013S Features
Q1 N-Channel
Max. RDS(on) = 9.6 m|? at VGS = 4.5 V, ID = 10 A
Q2 N-Channel
Max. RDS(on) = 2.7 m|? at VGS = 4.5 V, ID = 22 A
Low inductance packaging shortens rise/fall times, resulting in lower switching losses
MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
RoHS Compliant
FDPC8013S Applications
Distribution
Other Wired Communications
Computing
Communications
General Purpose Point of Load
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