FDPC5018SG
- Mfr.Part #
- FDPC5018SG
- Manufacturer
- onsemi
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- MOSFET 2N-CH 30V PWRCLIP56
- Stock
- 26,190
- In Stock :
- 26,190
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Package / Case :
- 8-PowerWDFN
- Reach Compliance Code :
- not_compliant
- Packaging :
- Tape and Reel (TR)
- Rds On (Max) @ Id, Vgs :
- 5m Ω @ 17A, 10V
- Mount :
- Surface Mount
- Feedback Cap-Max (Crss) :
- 60 pF
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 8
- Transistor Application :
- SWITCHING
- Drain-source On Resistance-Max :
- 0.005ohm
- Drain Current-Max (Abs) (ID) :
- 17A
- Power - Max :
- 1W 1.1W
- FET Type :
- 2 N-Channel (Dual) Asymmetrical
- Input Capacitance (Ciss) (Max) @ Vds :
- 1715pF @ 15V
- Factory Lead Time :
- 23 Weeks
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- FET Feature :
- Standard
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- 32A
- Terminal Form :
- NO LEAD
- Peak Reflow Temperature (Cel) :
- 260
- Current - Continuous Drain (Id) @ 25°C :
- 17A 32A
- DS Breakdown Voltage-Min :
- 30V
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Series :
- PowerTrench®
- Configuration :
- SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
- Terminal Finish :
- Tin (Sn)
- Operating Mode :
- ENHANCEMENT MODE
- Weight :
- 207.7333mg
- Max Power Dissipation :
- 1.1W
- Gate Charge (Qg) (Max) @ Vgs :
- 24nC @ 10V
- Drain to Source Voltage (Vdss) :
- 30V
- Number of Elements :
- 2
- Number of Pins :
- 8
- Pbfree Code :
- yes
- Datasheets
- FDPC5018SG
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FDPC5018SG datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDPC5018SG Description
The device includes two specialized N-channel MOSFET in the dual package. The switch nodes are connected internally for easy placement and wiring of synchronous step-down converters. The control of MOSFET (Q1) and synchronous FET (Q2) is designed to provide optimal power efficiency.
FDPC5018SG Features
Q1 N-Channel
Max. RDS(on) = 5.0 m|? at VGS = 10 V, ID = 17 A
Max. RDS(on) = 6.5 m|? at VGS = 10 V, ID = 17 A
Q2 N-Channel
Max. RDS(on) = 1.6 m|? at VGS = 10 V, ID = 32 A
Max. RDS(on) = 2.0 m|? at VGS = 4.5 V, ID = 28 A
Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses
MOSFET Integration Enables Optimum Layout for Lower Circuit Inductance and Reduced Switch Node Ringing
RoHS Compliant
FDPC5018SG Applications
Computing
Communications
General Purpose Point of Load
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