FDPC5018SG
- Mfr.Part #
- FDPC5018SG
- Manufacturer
- onsemi
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- MOSFET 2N-CH 30V PWRCLIP56
- Stock
- 26,190
- In Stock :
- 26,190
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Factory Lead Time :
- 23 Weeks
- Configuration :
- SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Drain Current-Max (Abs) (ID) :
- 17A
- Feedback Cap-Max (Crss) :
- 60 pF
- Transistor Application :
- SWITCHING
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 8
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- 8-PowerWDFN
- Gate Charge (Qg) (Max) @ Vgs :
- 24nC @ 10V
- Operating Temperature :
- -55°C~150°C TJ
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- JESD-609 Code :
- e3
- Continuous Drain Current (ID) :
- 32A
- Pbfree Code :
- yes
- Max Power Dissipation :
- 1.1W
- Weight :
- 207.7333mg
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- FET Type :
- 2 N-Channel (Dual) Asymmetrical
- Number of Elements :
- 2
- Series :
- PowerTrench®
- DS Breakdown Voltage-Min :
- 30V
- RoHS Status :
- ROHS3 Compliant
- Reach Compliance Code :
- not_compliant
- Transistor Element Material :
- SILICON
- FET Feature :
- Standard
- Terminal Finish :
- Tin (Sn)
- Input Capacitance (Ciss) (Max) @ Vds :
- 1715pF @ 15V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Rds On (Max) @ Id, Vgs :
- 5m Ω @ 17A, 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Form :
- NO LEAD
- Number of Terminations :
- 8
- Drain-source On Resistance-Max :
- 0.005ohm
- Drain to Source Voltage (Vdss) :
- 30V
- Current - Continuous Drain (Id) @ 25°C :
- 17A 32A
- ECCN Code :
- EAR99
- Power - Max :
- 1W 1.1W
- Datasheets
- FDPC5018SG
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FDPC5018SG datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDPC5018SG Description
The device includes two specialized N-channel MOSFET in the dual package. The switch nodes are connected internally for easy placement and wiring of synchronous step-down converters. The control of MOSFET (Q1) and synchronous FET (Q2) is designed to provide optimal power efficiency.
FDPC5018SG Features
Q1 N-Channel
Max. RDS(on) = 5.0 m|? at VGS = 10 V, ID = 17 A
Max. RDS(on) = 6.5 m|? at VGS = 10 V, ID = 17 A
Q2 N-Channel
Max. RDS(on) = 1.6 m|? at VGS = 10 V, ID = 32 A
Max. RDS(on) = 2.0 m|? at VGS = 4.5 V, ID = 28 A
Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses
MOSFET Integration Enables Optimum Layout for Lower Circuit Inductance and Reduced Switch Node Ringing
RoHS Compliant
FDPC5018SG Applications
Computing
Communications
General Purpose Point of Load
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