FDB12N50UTM

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Power Dissipation :

165W

Packaging :

Tape and Reel (TR)

Rise Time :

45ns

Input Capacitance (Ciss) (Max) @ Vds :

1395pF @ 25V

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

5V @ 250μA

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

RoHS Compliant

FET Type :

N-Channel

Mounting Type :

Surface Mount

Weight :

1.31247g

Gate to Source Voltage (Vgs) :

30V

Rds On (Max) @ Id, Vgs :

800m Ω @ 5A, 10V

Turn On Delay Time :

35 ns

Number of Pins :

3

Series :

FRFET®

Continuous Drain Current (ID) :

10A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

165W Tc

Number of Elements :

1

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Turn-Off Delay Time :

60 ns

Mount :

Surface Mount

Fall Time (Typ) :

35 ns

Element Configuration :

Single

Drain to Source Breakdown Voltage :

500V

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V