FDB14N30TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

30V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Width :

11.33mm

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Length :

10.67mm

Threshold Voltage :

5V

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Termination :

SMD/SMT

Drain to Source Breakdown Voltage :

300V

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

75 ns

Continuous Drain Current (ID) :

14A

Pulsed Drain Current-Max (IDM) :

56A

REACH SVHC :

No SVHC

Pbfree Code :

yes

Qualification Status :

Not Qualified

Power Dissipation-Max :

140W Tc

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

1.31247g

Contact Plating :

Tin

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Element Configuration :

Single

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Series :

UniFET™

Number of Pins :

2

Height :

4.83mm

Vgs(th) (Max) @ Id :

5V @ 250μA

Factory Lead Time :

4 Weeks

Number of Terminations :

2

Turn On Delay Time :

20 ns

Vgs (Max) :

±30V

Turn-Off Delay Time :

30 ns

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

not_compliant

Rise Time :

105ns

Input Capacitance (Ciss) (Max) @ Vds :

1060pF @ 25V

Dual Supply Voltage :

300V

ECCN Code :

EAR99

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

330 mJ

Mount :

Surface Mount

Nominal Vgs :

5 V

Case Connection :

DRAIN

Resistance :

290mOhm

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Number of Elements :

1

Power Dissipation :

140W

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

290m Ω @ 7A, 10V

Mounting Type :

Surface Mount