FDB14AN06LA0

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

60V

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

125W Tc

Pbfree Code :

yes

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

JEDEC-95 Code :

TO-220AB

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

Unknown

JESD-30 Code :

R-PSFM-T3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

PowerTrench®

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 5V

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

46 mJ

Terminal Finish :

NOT SPECIFIED

Qualification Status :

COMMERCIAL

Surface Mount :

No

Drain-source On Resistance-Max :

0.012Ohm

Current - Continuous Drain (Id) @ 25°C :

10A Ta 67A Tc

Drain Current-Max (Abs) (ID) :

10A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

11.6m Ω @ 67A, 10V

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

3V @ 250µA

Pin Count :

3

DS Breakdown Voltage-Min :

60V

Number of Elements :

1

Number of Terminations :

3

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Terminal Form :

THROUGH-HOLE

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

2.9pF @ 25V