FDB120N10

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Width :

9.65mm

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Temperature :

-55°C~175°C TJ

Pulsed Drain Current-Max (IDM) :

296A

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

8 Weeks

Turn On Delay Time :

27 ns

Rds On (Max) @ Id, Vgs :

12m Ω @ 74A, 10V

Drain to Source Breakdown Voltage :

100V

Height :

4.83mm

JESD-609 Code :

e3

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Terminal Finish :

Tin (Sn)

Continuous Drain Current (ID) :

74A

Rise Time :

105ns

Series :

PowerTrench®

Turn-Off Delay Time :

39 ns

Case Connection :

DRAIN

Power Dissipation-Max :

170W Tc

Mounting Type :

Surface Mount

Mount :

Surface Mount

Length :

10.67mm

Number of Pins :

3

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Element Configuration :

Single

Reach Compliance Code :

not_compliant

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pbfree Code :

yes

Power Dissipation :

170W

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Published :

2009

Weight :

1.31247g

Fall Time (Typ) :

15 ns

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

74A Tc

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

5605pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

86nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED