FDB110N15A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Form :

Gull wing

Operating Temperature :

-55°C~175°C TJ

Factory Lead Time :

8 Weeks

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FET Type :

N-Channel

Number of Terminations :

2

Number of Pins :

3

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

61nC @ 10V

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Power Dissipation :

234W

Drain to Source Breakdown Voltage :

150V

Height :

4.83mm

Published :

2011

Turn On Delay Time :

25 ns

Turn-Off Delay Time :

46 ns

Input Capacitance (Ciss) (Max) @ Vds :

4510pF @ 75V

Case Connection :

DRAIN

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20V

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Number of Elements :

1

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

11m Ω @ 92A, 10V

Series :

PowerTrench®

Power Dissipation-Max :

234W Tc

Fall Time (Typ) :

14 ns

Terminal Finish :

Tin (Sn)

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

92A Tc

Rise Time :

26ns

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

Width :

9.65mm

Continuous Drain Current (ID) :

92A

Length :

10.67mm

Weight :

1.31247g

Radiation Hardening :

No