FDB12N50TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

9 Weeks

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Power Dissipation-Max :

165W Tc

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RoHS Status :

ROHS3 Compliant

Rise Time :

60ns

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

11.5A Tc

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

650m Ω @ 6A, 10V

Lead Free :

Lead Free

Mount :

Surface Mount

Terminal Form :

Gull wing

Power Dissipation :

165W

Continuous Drain Current (ID) :

11.5A

JESD-30 Code :

R-PSSO-G2

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

46A

Length :

10.67mm

Width :

9.65mm

Transistor Element Material :

SILICON

Weight :

1.31247g

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Fall Time (Typ) :

35 ns

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Terminations :

2

Resistance :

650mOhm

Published :

2003

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

30V

Case Connection :

DRAIN

Turn-Off Delay Time :

45 ns

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±30V

Height :

4.83mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reach Compliance Code :

not_compliant

Number of Pins :

3

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

1315pF @ 25V

Terminal Finish :

Tin (Sn)

Drain to Source Breakdown Voltage :

500V

FET Type :

N-Channel

Number of Elements :

1

Turn On Delay Time :

25 ns

Avalanche Energy Rating (Eas) :

456 mJ

Series :

UniFET™