DTD143ECT116

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PDSO-G3

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 50mA

Peak Reflow Temperature (Cel) :

260

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Qualification Status :

Not Qualified

HTS Code :

8541.21.00.75

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Current - Collector Cutoff (Max) :

500nA

Factory Lead Time :

13 Weeks

Polarity/Channel Type :

NPN

Collector Emitter Breakdown Voltage :

50V

Collector Emitter Voltage (VCEO) :

300mV

Power - Max :

200mW

Pbfree Code :

yes

VCEsat-Max :

0.3 V

Max Power Dissipation :

200mW

Frequency - Transition :

200MHz

Operating Temperature (Max) :

150°C

Transistor Type :

NPN - Pre-Biased

Mounting Type :

Surface Mount

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

47 @ 50mA 5V

Terminal Finish :

Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

Resistor - Base (R1) :

4.7 k Ω

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 1

Resistor - Emitter Base (R2) :

4.7 k Ω

JESD-609 Code :

e1

Package / Case :

TO-236-3, SC-59, SOT-23-3

Transition Frequency :

200MHz

Terminal Position :

Dual

Transistor Application :

SWITCHING

Number of Elements :

1

Pin Count :

3

Max Breakdown Voltage :

50V

Mount :

Surface Mount

Number of Terminations :

3

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

10

Max Collector Current :

500mA