DTD123YCT116

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Operating Temperature (Max) :

150°C

Transistor Application :

SWITCHING

Published :

2004

Qualification Status :

Not Qualified

Number of Terminations :

3

Number of Elements :

1

Pin Count :

3

Current - Collector Cutoff (Max) :

500nA

Transition Frequency :

200MHz

JESD-30 Code :

R-PDSO-G3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

NPN

Terminal Form :

Gull wing

DC Current Gain (hFE) (Min) @ Ic, Vce :

56 @ 50mA 5V

Resistor - Base (R1) :

2.2 k Ω

ECCN Code :

EAR99

Frequency - Transition :

200MHz

Terminal Position :

Dual

Transistor Type :

NPN - Pre-Biased

Factory Lead Time :

13 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Collector Emitter Breakdown Voltage :

50V

VCEsat-Max :

0.3 V

Max Power Dissipation :

200mW

Power - Max :

200mW

Max Collector Current :

500mA

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 50mA

Package / Case :

TO-236-3, SC-59, SOT-23-3

Collector Emitter Voltage (VCEO) :

300mV

Max Breakdown Voltage :

50V

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Additional Feature :

DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 4.5

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Reach Compliance Code :

not_compliant

Mount :

Surface Mount

Resistor - Emitter Base (R2) :

10 k Ω

HTS Code :

8541.21.00.75

Peak Reflow Temperature (Cel) :

NOT SPECIFIED