DMN2990UDJ-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Factory Lead Time :

16 Weeks

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

0.33A

Element Configuration :

Dual

Mount :

Surface Mount

Published :

2011

Transistor Element Material :

SILICON

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

27.6pF @ 16V

Vgs(th) (Max) @ Id :

1V @ 250μA

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

0.5nC @ 4.5V

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Turn-Off Delay Time :

19 ns

Number of Elements :

2

Drain-source On Resistance-Max :

0.99Ohm

Turn On Delay Time :

4 ns

Pbfree Code :

yes

Number of Pins :

6

Additional Feature :

High Reliability

Terminal Form :

Flat

ECCN Code :

EAR99

FET Type :

2 N-Channel (Dual)

Gate to Source Voltage (Vgs) :

8V

Max Power Dissipation :

350mW

Pin Count :

6

Operating Mode :

ENHANCEMENT MODE

FET Feature :

Logic Level Gate

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

990m Ω @ 100mA, 4.5V

Rise Time :

3.3ns

Drain to Source Voltage (Vdss) :

20V

Contact Plating :

Tin

Lead Free :

Lead Free

Fall Time (Typ) :

6.4 ns

Continuous Drain Current (ID) :

450mA

Mounting Type :

Surface Mount

Package / Case :

SOT-963

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Time@Peak Reflow Temperature-Max (s) :

40

Number of Terminations :

6

REACH SVHC :

No SVHC

Power Dissipation :

350mW