DMN2500UFB4-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Width :

650μm

Lead Free :

Lead Free

Turn-Off Delay Time :

26.7 ns

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

260

Published :

2012

Number of Elements :

1

Package / Case :

3-XFDFN

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

400m Ω @ 600mA, 4.5V

Pbfree Code :

yes

Drain-source On Resistance-Max :

0.4Ohm

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

460mW Ta

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

0.74nC @ 4.5V

Operating Temperature :

-55°C~150°C TJ

Additional Feature :

High Reliability

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Vgs(th) (Max) @ Id :

1V @ 250μA

Drain to Source Breakdown Voltage :

20V

Terminal Position :

BOTTOM

Element Configuration :

Single

Fall Time (Typ) :

12.3 ns

Time@Peak Reflow Temperature-Max (s) :

40

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e4

Number of Channels :

1

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

60.67pF @ 16V

Number of Terminations :

3

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Drain Current-Max (Abs) (ID) :

1A

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

6V

Vgs (Max) :

±6V

Height :

350μm

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

810mA

Length :

1.05mm

Turn On Delay Time :

5.1 ns

Rise Time :

7.4ns

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

810mA Ta