DMN2114SN-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Matte Tin (Sn)

FET Type :

N-Channel

ECCN Code :

EAR99

Number of Terminations :

3

Package / Case :

TO-236-3, SC-59, SOT-23-3

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

100m Ω @ 500mA, 4.5V

JESD-30 Code :

R-PDSO-G3

Element Configuration :

Single

Terminal Form :

Gull wing

Current - Continuous Drain (Id) @ 25°C :

1.2A Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

500mW

Weight :

7.994566mg

Fall Time (Typ) :

15 ns

Power Dissipation-Max :

500mW Ta

Drain to Source Breakdown Voltage :

20V

Height :

1.3mm

Vgs (Max) :

±12V

Input Capacitance (Ciss) (Max) @ Vds :

180pF @ 10V

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Length :

3.1mm

Pin Count :

3

Continuous Drain Current (ID) :

1.2A

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

1.4V @ 1mA

Mount :

Surface Mount

REACH SVHC :

No SVHC

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

12V

Turn-Off Delay Time :

50 ns

Number of Channels :

1

Mounting Type :

Surface Mount

Number of Elements :

1

Transistor Application :

SWITCHING

Additional Feature :

High Reliability

JESD-609 Code :

e3

Width :

1.7mm

Turn On Delay Time :

10 ns

Published :

2011

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Element Material :

SILICON

Rise Time :

15ns

Pbfree Code :

yes

Factory Lead Time :

6 Weeks