DMN2022UFDF-13

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

56 ns

Power Dissipation-Max :

660mW Ta

Vgs(th) (Max) @ Id :

1V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

907pF @ 10V

Package / Case :

6-UDFN Exposed Pad

Number of Elements :

1

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

22m Ω @ 4A, 4.5V

Rise Time :

87ns

RoHS Status :

ROHS3 Compliant

Published :

2014

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

Turn-Off Delay Time :

632 ns

JESD-30 Code :

S-PDSO-N6

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

20V

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Form :

NO LEAD

Gate to Source Voltage (Vgs) :

8V

Drain-source On Resistance-Max :

0.05Ohm

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

6

Element Configuration :

Single

Continuous Drain Current (ID) :

7.9A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

7.9A Ta

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 8V

Vgs (Max) :

±8V

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Number of Channels :

1

Additional Feature :

High Reliability

Factory Lead Time :

14 Weeks

Mount :

Surface Mount

JESD-609 Code :

e4

Fall Time (Typ) :

239 ns

Mounting Type :

Surface Mount

FET Type :

N-Channel