DMN2015UFDE-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

12V

Rds On (Max) @ Id, Vgs :

11.6m Ω @ 8.5A, 4.5V

Case Connection :

DRAIN

Turn-Off Delay Time :

43.6 ns

Rise Time :

16.8ns

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

1779pF @ 10V

Fall Time (Typ) :

10.9 ns

Peak Reflow Temperature (Cel) :

260

REACH SVHC :

No SVHC

JESD-609 Code :

e4

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

Number of Terminations :

3

Drain to Source Breakdown Voltage :

20V

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Number of Pins :

6

Turn On Delay Time :

7.4 ns

Power Dissipation-Max :

660mW Ta

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

JESD-30 Code :

R-PDSO-N3

Mounting Type :

Surface Mount

Number of Elements :

1

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Width :

2.05mm

Continuous Drain Current (ID) :

10.5A

Height :

580μm

Additional Feature :

High Reliability

Published :

2013

ECCN Code :

EAR99

Vgs (Max) :

±12V

Current - Continuous Drain (Id) @ 25°C :

10.5A Ta

Radiation Hardening :

No

Drain Current-Max (Abs) (ID) :

9.4A

Factory Lead Time :

6 Weeks

Package / Case :

6-PowerUDFN

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

1.1V @ 250μA

Time@Peak Reflow Temperature-Max (s) :

40

Number of Channels :

1

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

45.6nC @ 10V

Length :

2.05mm

Operating Mode :

ENHANCEMENT MODE