ZXTN649FTA
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- Mfr.Part #
- ZXTN649FTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 25V 3A SOT23-3
- Stock
- 948
- In Stock ：
- 948
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 16 Weeks
- Mount :
- Surface Mount
- Pin Count :
- 3
- Base Part Number :
- ZXTN649
- Terminal Position :
- Dual
- Collector Emitter Saturation Voltage :
- 200mV
- Max Collector Current :
- 3A
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 300mA, 3A
- Element Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Collector Base Voltage (VCBO) :
- 35V
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 25V
- Collector Emitter Voltage (VCEO) :
- 25V
- Packaging :
- Digi-Reel®
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Continuous Collector Current :
- 3A
- Number of Pins :
- 3
- Published :
- 2006
- Terminal Finish :
- Matte Tin (Sn)
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Form :
- Gull wing
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 7V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 2V
- Number of Terminations :
- 3
- Weight :
- 7.994566mg
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 725mW
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Max Breakdown Voltage :
- 25V
- Radiation Hardening :
- No
- Transistor Type :
- NPN
- Datasheets
- ZXTN649FTA
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Digi-Reel® Surface Mount
ZXTN649FTA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 100mA 2V.With a collector emitter saturation voltage of 200mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 300mA, 3A.In order to achieve high efficiency, the continuous collector voltage should be kept at 3A.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.There is a breakdown input voltage of 25V volts that it can take.Collector current can be as low as 3A volts at its maximum.
ZXTN649FTA Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 300mV @ 300mA, 3A
the emitter base voltage is kept at 7V
ZXTN649FTA Applications
There are a lot of Diodes Incorporated
ZXTN649FTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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