ZXTN617MATA
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- Mfr.Part #
- ZXTN617MATA
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-UDFN
- Datasheet
- Download
- Description
- TRANS NPN 15V 4.5A DFN2020B-3
- Stock
- 62,246
- In Stock ：
- 62,246
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- ZXTN617MA
- Emitter Base Voltage (VEBO) :
- 7V
- Pin Count :
- 3
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e4
- Additional Feature :
- High Reliability
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 3W
- Factory Lead Time :
- 15 Weeks
- Polarity/Channel Type :
- NPN
- Power Dissipation :
- 2.45W
- Transistor Element Material :
- SILICON
- Continuous Collector Current :
- 4.5A
- Vce Saturation (Max) @ Ib, Ic :
- 280mV @ 50mA, 4.5A
- Max Breakdown Voltage :
- 15V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 3A 2V
- Collector Emitter Voltage (VCEO) :
- 15V
- Power - Max :
- 1.5W
- Published :
- 2016
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- 200mV
- Package / Case :
- 3-UDFN
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Position :
- Dual
- Gain Bandwidth Product :
- 120MHz
- Max Collector Current :
- 5A
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Frequency :
- 120MHz
- Mount :
- Surface Mount
- Number of Terminations :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Contact Plating :
- Gold
- Collector Base Voltage (VCBO) :
- 40V
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Breakdown Voltage :
- 15V
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 25nA
- Number of Pins :
- 3
- Case Connection :
- COLLECTOR
- Transition Frequency :
- 120MHz
- Datasheets
- ZXTN617MATA
NPN -55°C~150°C TJ 25nA 1 Elements 3 Terminations SILICON NPN 3-UDFN Tape & Reel (TR) Surface Mount
ZXTN617MATA Overview
This device has a DC current gain of 200 @ 3A 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 200mV.A VCE saturation (Max) of 280mV @ 50mA, 4.5A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 4.5A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.As you can see, the part has a transition frequency of 120MHz.A breakdown input voltage of 15V volts can be used.A maximum collector current of 5A volts is possible.
ZXTN617MATA Features
the DC current gain for this device is 200 @ 3A 2V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 280mV @ 50mA, 4.5A
the emitter base voltage is kept at 7V
a transition frequency of 120MHz
ZXTN617MATA Applications
There are a lot of Diodes Incorporated
ZXTN617MATA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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