ZXTN617MATA
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- Mfr.Part #
- ZXTN617MATA
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-UDFN
- Datasheet
- Download
- Description
- TRANS NPN 15V 4.5A DFN2020B-3
- Stock
- 62,246
- In Stock ：
- 62,246
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Surface Mount
- Terminal Position :
- Dual
- JESD-609 Code :
- e4
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 15V
- Pin Count :
- 3
- Package / Case :
- 3-UDFN
- Max Power Dissipation :
- 3W
- Contact Plating :
- Gold
- Transistor Type :
- NPN
- REACH SVHC :
- No SVHC
- Base Part Number :
- ZXTN617MA
- Number of Terminations :
- 3
- Max Collector Current :
- 5A
- Vce Saturation (Max) @ Ib, Ic :
- 280mV @ 50mA, 4.5A
- Case Connection :
- COLLECTOR
- Additional Feature :
- High Reliability
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Collector Current :
- 4.5A
- Collector Emitter Voltage (VCEO) :
- 15V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Gain Bandwidth Product :
- 120MHz
- Emitter Base Voltage (VEBO) :
- 7V
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 25nA
- Collector Base Voltage (VCBO) :
- 40V
- Power Dissipation :
- 2.45W
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 3A 2V
- RoHS Status :
- ROHS3 Compliant
- Frequency :
- 120MHz
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- 200mV
- Max Breakdown Voltage :
- 15V
- Factory Lead Time :
- 15 Weeks
- Number of Pins :
- 3
- Element Configuration :
- Single
- Published :
- 2016
- Polarity/Channel Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Transition Frequency :
- 120MHz
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Power - Max :
- 1.5W
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- ZXTN617MATA
NPN -55°C~150°C TJ 25nA 1 Elements 3 Terminations SILICON NPN 3-UDFN Tape & Reel (TR) Surface Mount
ZXTN617MATA Overview
This device has a DC current gain of 200 @ 3A 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 200mV.A VCE saturation (Max) of 280mV @ 50mA, 4.5A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 4.5A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.As you can see, the part has a transition frequency of 120MHz.A breakdown input voltage of 15V volts can be used.A maximum collector current of 5A volts is possible.
ZXTN617MATA Features
the DC current gain for this device is 200 @ 3A 2V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 280mV @ 50mA, 4.5A
the emitter base voltage is kept at 7V
a transition frequency of 120MHz
ZXTN617MATA Applications
There are a lot of Diodes Incorporated
ZXTN617MATA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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