ZXTN5551GTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Package / Case :

TO-261-4, TO-261AA

Collector Emitter Breakdown Voltage :

160V

Polarity/Channel Type :

NPN

Gain Bandwidth Product :

130MHz

Vce Saturation (Max) @ Ib, Ic :

200mV @ 5mA, 50mA

Lead Free :

Lead Free

Current - Collector Cutoff (Max) :

50nA ICBO

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Frequency :

130MHz

Transistor Element Material :

SILICON

Number of Terminations :

4

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

40

Pin Count :

4

Number of Pins :

4

Power Dissipation :

2W

ECCN Code :

EAR99

Base Part Number :

ZXTN5551

Terminal Finish :

Matte Tin (Sn)

Transition Frequency :

130MHz

Peak Reflow Temperature (Cel) :

260

Max Collector Current :

600mA

Case Connection :

COLLECTOR

Length :

6.7mm

Packaging :

Tape and Reel (TR)

Max Breakdown Voltage :

160V

Terminal Position :

Dual

Published :

2006

Number of Elements :

1

Transistor Type :

NPN

Mounting Type :

Surface Mount

Factory Lead Time :

15 Weeks

Terminal Form :

Gull wing

Element Configuration :

Single

Weight :

7.994566mg

Width :

3.7mm

Emitter Base Voltage (VEBO) :

6V

Pbfree Code :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

Collector Emitter Voltage (VCEO) :

160V

Transistor Application :

AMPLIFIER

JESD-609 Code :

e3

Radiation Hardening :

No

Collector Base Voltage (VCBO) :

180V

Height :

1.65mm

Mount :

Surface Mount

Max Power Dissipation :

2W

RoHS Status :

ROHS3 Compliant