ZXTN5551GTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Time@Peak Reflow Temperature-Max (s) :

40

Radiation Hardening :

No

Emitter Base Voltage (VEBO) :

6V

Published :

2006

Current - Collector Cutoff (Max) :

50nA ICBO

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

Vce Saturation (Max) @ Ib, Ic :

200mV @ 5mA, 50mA

Base Part Number :

ZXTN5551

Transistor Application :

AMPLIFIER

Terminal Finish :

Matte Tin (Sn)

Mount :

Surface Mount

ECCN Code :

EAR99

Number of Elements :

1

Transistor Type :

NPN

Package / Case :

TO-261-4, TO-261AA

RoHS Status :

ROHS3 Compliant

Max Breakdown Voltage :

160V

Pbfree Code :

yes

Terminal Form :

Gull wing

Power Dissipation :

2W

Pin Count :

4

Terminal Position :

Dual

Frequency :

130MHz

Polarity/Channel Type :

NPN

Number of Pins :

4

Number of Terminations :

4

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Height :

1.65mm

Factory Lead Time :

15 Weeks

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Collector Emitter Breakdown Voltage :

160V

JESD-609 Code :

e3

Max Collector Current :

600mA

Operating Temperature :

-55°C~150°C TJ

Max Power Dissipation :

2W

Gain Bandwidth Product :

130MHz

Length :

6.7mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Base Voltage (VCBO) :

180V

Transition Frequency :

130MHz

Collector Emitter Voltage (VCEO) :

160V

Lead Free :

Lead Free

Weight :

7.994566mg

Width :

3.7mm

Case Connection :

COLLECTOR

Transistor Element Material :

SILICON