ZXTN5551FLTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Package / Case :

TO-236-3, SC-59, SOT-23-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Emitter Base Voltage (VEBO) :

6V

Max Power Dissipation :

330mW

Operating Temperature :

-55°C~150°C TJ

Height :

1.02mm

Time@Peak Reflow Temperature-Max (s) :

40

Length :

3.04mm

Radiation Hardening :

No

Factory Lead Time :

15 Weeks

Element Configuration :

Single

Collector Emitter Breakdown Voltage :

160V

ECCN Code :

EAR99

Polarity/Channel Type :

NPN

Current - Collector Cutoff (Max) :

50nA ICBO

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Max Collector Current :

600mA

Collector Emitter Voltage (VCEO) :

160V

REACH SVHC :

No SVHC

Base Part Number :

ZXTN5551

Collector Base Voltage (VCBO) :

180V

Gain Bandwidth Product :

130MHz

Power Dissipation :

330mW

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

Width :

1.4mm

Number of Terminations :

3

Vce Saturation (Max) @ Ib, Ic :

200mV @ 5mA, 50mA

Number of Pins :

3

Transition Frequency :

130MHz

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Frequency :

130MHz

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Pin Count :

3

Weight :

7.994566mg

Terminal Finish :

Matte Tin (Sn) - annealed

Mount :

Surface Mount

Terminal Position :

Dual

Transistor Type :

NPN

Pbfree Code :

yes

Published :

2007

Max Breakdown Voltage :

160V