ZXTN26020DMFTA
- Mfr.Part #
- ZXTN26020DMFTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-XDFN
- Datasheet
- Download
- Description
- TRANS NPN 20V 1.5A 3DFN
- Stock
- 20,636
- In Stock :
- 20,636
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- Pin Count :
- 3
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 260MHz
- Collector Emitter Saturation Voltage :
- 290mV
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- 260
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Terminations :
- 3
- Published :
- 2006
- Element Configuration :
- Single
- Number of Pins :
- 3
- Frequency :
- 260MHz
- Polarity/Channel Type :
- NPN
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 20V
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Type :
- NPN
- Max Collector Current :
- 1.5A
- Package / Case :
- 3-XDFN
- Collector Base Voltage (VCBO) :
- 20V
- Power Dissipation :
- 1W
- Transition Frequency :
- 260MHz
- JESD-609 Code :
- e4
- Emitter Base Voltage (VEBO) :
- 7V
- Additional Feature :
- High Reliability
- Vce Saturation (Max) @ Ib, Ic :
- 290mV @ 40mA, 2A
- Terminal Position :
- BOTTOM
- REACH SVHC :
- No SVHC
- Case Connection :
- COLLECTOR
- Factory Lead Time :
- 15 Weeks
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 290 @ 500mA 2V
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 1W
- Collector Emitter Breakdown Voltage :
- 20V
- Datasheets
- ZXTN26020DMFTA

NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN 3-XDFN Tape & Reel (TR) Surface Mount
ZXTN26020DMFTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 290 @ 500mA 2V.The collector emitter saturation voltage is 290mV, which allows for maximum design flexibility.When VCE saturation is 290mV @ 40mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 7V can achieve high levels of efficiency.In the part, the transition frequency is 260MHz.A maximum collector current of 1.5A volts can be achieved.
ZXTN26020DMFTA Features
the DC current gain for this device is 290 @ 500mA 2V
a collector emitter saturation voltage of 290mV
the vce saturation(Max) is 290mV @ 40mA, 2A
the emitter base voltage is kept at 7V
a transition frequency of 260MHz
ZXTN26020DMFTA Applications
There are a lot of Diodes Incorporated
ZXTN26020DMFTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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