ZXTN26020DMFTA
- Mfr.Part #
- ZXTN26020DMFTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- 3-XDFN
- Datasheet
- Download
- Description
- TRANS NPN 20V 1.5A 3DFN
- Stock
- 20,636
- In Stock :
- 20,636
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pin Count :
- 3
- Collector Emitter Voltage (VCEO) :
- 20V
- Emitter Base Voltage (VEBO) :
- 7V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- JESD-609 Code :
- e4
- Case Connection :
- COLLECTOR
- Power Dissipation :
- 1W
- Mount :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 290mV @ 40mA, 2A
- Package / Case :
- 3-XDFN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 290 @ 500mA 2V
- Factory Lead Time :
- 15 Weeks
- Published :
- 2006
- Radiation Hardening :
- No
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- NPN
- Transistor Element Material :
- SILICON
- Additional Feature :
- High Reliability
- Frequency :
- 260MHz
- Transition Frequency :
- 260MHz
- Collector Base Voltage (VCBO) :
- 20V
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Collector Emitter Saturation Voltage :
- 290mV
- Transistor Application :
- SWITCHING
- Terminal Position :
- BOTTOM
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Breakdown Voltage :
- 20V
- REACH SVHC :
- No SVHC
- Max Collector Current :
- 1.5A
- Number of Pins :
- 3
- Gain Bandwidth Product :
- 260MHz
- Max Power Dissipation :
- 1W
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Surface Mount
- Transistor Type :
- NPN
- Number of Elements :
- 1
- Datasheets
- ZXTN26020DMFTA

NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN 3-XDFN Tape & Reel (TR) Surface Mount
ZXTN26020DMFTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 290 @ 500mA 2V.The collector emitter saturation voltage is 290mV, which allows for maximum design flexibility.When VCE saturation is 290mV @ 40mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 7V can achieve high levels of efficiency.In the part, the transition frequency is 260MHz.A maximum collector current of 1.5A volts can be achieved.
ZXTN26020DMFTA Features
the DC current gain for this device is 290 @ 500mA 2V
a collector emitter saturation voltage of 290mV
the vce saturation(Max) is 290mV @ 40mA, 2A
the emitter base voltage is kept at 7V
a transition frequency of 260MHz
ZXTN26020DMFTA Applications
There are a lot of Diodes Incorporated
ZXTN26020DMFTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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