ZXTN26020DMFTA

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Mfr.Part #
ZXTN26020DMFTA
Manufacturer
Diodes Incorporated
Package / Case
3-XDFN
Datasheet
Download
Description
TRANS NPN 20V 1.5A 3DFN
Stock
20,636
In Stock :
20,636

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Time@Peak Reflow Temperature-Max (s) :
40
Pin Count :
3
Collector Emitter Voltage (VCEO) :
20V
Emitter Base Voltage (VEBO) :
7V
Current - Collector Cutoff (Max) :
100nA ICBO
Operating Temperature :
-55°C~150°C TJ
Number of Terminations :
3
Pbfree Code :
yes
JESD-609 Code :
e4
Case Connection :
COLLECTOR
Power Dissipation :
1W
Mount :
Surface Mount
Vce Saturation (Max) @ Ib, Ic :
290mV @ 40mA, 2A
Package / Case :
3-XDFN
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
DC Current Gain (hFE) (Min) @ Ic, Vce :
290 @ 500mA 2V
Factory Lead Time :
15 Weeks
Published :
2006
Radiation Hardening :
No
Element Configuration :
Single
ECCN Code :
EAR99
Polarity/Channel Type :
NPN
Transistor Element Material :
SILICON
Additional Feature :
High Reliability
Frequency :
260MHz
Transition Frequency :
260MHz
Collector Base Voltage (VCBO) :
20V
RoHS Status :
ROHS3 Compliant
Terminal Finish :
Nickel/Palladium/Gold (Ni/Pd/Au)
Collector Emitter Saturation Voltage :
290mV
Transistor Application :
SWITCHING
Terminal Position :
BOTTOM
Packaging :
Tape and Reel (TR)
Collector Emitter Breakdown Voltage :
20V
REACH SVHC :
No SVHC
Max Collector Current :
1.5A
Number of Pins :
3
Gain Bandwidth Product :
260MHz
Max Power Dissipation :
1W
Peak Reflow Temperature (Cel) :
260
Mounting Type :
Surface Mount
Transistor Type :
NPN
Number of Elements :
1
Datasheets
ZXTN26020DMFTA
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated ZXTN26020DMFTA from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Package / Case:3-XDFN, Number of Pins:3, Mounting Type:Surface Mount, ZXTN26020DMFTA pinout, ZXTN26020DMFTA datasheet PDF, ZXTN26020DMFTA amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated ZXTN26020DMFTA ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated ZXTN26020DMFTA


NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN 3-XDFN Tape & Reel (TR) Surface Mount

ZXTN26020DMFTA Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 290 @ 500mA 2V.The collector emitter saturation voltage is 290mV, which allows for maximum design flexibility.When VCE saturation is 290mV @ 40mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 7V can achieve high levels of efficiency.In the part, the transition frequency is 260MHz.A maximum collector current of 1.5A volts can be achieved.

ZXTN26020DMFTA Features


the DC current gain for this device is 290 @ 500mA 2V
a collector emitter saturation voltage of 290mV
the vce saturation(Max) is 290mV @ 40mA, 2A
the emitter base voltage is kept at 7V
a transition frequency of 260MHz


ZXTN26020DMFTA Applications


There are a lot of Diodes Incorporated
ZXTN26020DMFTA applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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