ZXTN25100DZTA
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- Mfr.Part #
- ZXTN25100DZTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 100V 2.5A SOT89-3
- Stock
- 19,100
- In Stock ：
- 19,100
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 100V
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- JESD-30 Code :
- R-PSSO-F3
- Number of Pins :
- 4
- Max Power Dissipation :
- 4.46W
- Base Part Number :
- ZXTN25100D
- RoHS Status :
- ROHS3 Compliant
- Frequency :
- 175MHz
- Polarity/Channel Type :
- NPN
- Terminal Finish :
- Matte Tin (Sn)
- Terminal Form :
- Flat
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 100V
- Width :
- 2.6mm
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 345mV @ 250mA, 2.5A
- Mount :
- Surface Mount
- Power Dissipation :
- 4.46W
- Transition Frequency :
- 175MHz
- Emitter Base Voltage (VEBO) :
- 7V
- Height :
- 1.6mm
- Max Collector Current :
- 2.5A
- Transistor Type :
- NPN
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- Max Breakdown Voltage :
- 100V
- Pbfree Code :
- yes
- Weight :
- 51.993025mg
- JESD-609 Code :
- e3
- Case Connection :
- COLLECTOR
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 10mA 2V
- Length :
- 4.6mm
- Packaging :
- Tape and Reel (TR)
- Collector Base Voltage (VCBO) :
- 180V
- Published :
- 2007
- REACH SVHC :
- No SVHC
- Gain Bandwidth Product :
- 175MHz
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Power - Max :
- 2.4W
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Package / Case :
- TO-243AA
- Radiation Hardening :
- No
- Factory Lead Time :
- 15 Weeks
- Datasheets
- ZXTN25100DZTA
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
ZXTN25100DZTA Overview
In this device, the DC current gain is 300 @ 10mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 345mV @ 250mA, 2.5A.With the emitter base voltage set at 7V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 175MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 2.5A volts at Single BJT transistors maximum.
ZXTN25100DZTA Features
the DC current gain for this device is 300 @ 10mA 2V
the vce saturation(Max) is 345mV @ 250mA, 2.5A
the emitter base voltage is kept at 7V
a transition frequency of 175MHz
ZXTN25100DZTA Applications
There are a lot of Diodes Incorporated
ZXTN25100DZTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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