ZXTN25100DZTA
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- Mfr.Part #
- ZXTN25100DZTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 100V 2.5A SOT89-3
- Stock
- 19,100
- In Stock ：
- 19,100
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 4
- Element Configuration :
- Single
- Weight :
- 51.993025mg
- Terminal Finish :
- Matte Tin (Sn)
- Package / Case :
- TO-243AA
- Transistor Element Material :
- SILICON
- Length :
- 4.6mm
- Transition Frequency :
- 175MHz
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 10mA 2V
- Pin Count :
- 3
- Width :
- 2.6mm
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 180V
- Mount :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Gain Bandwidth Product :
- 175MHz
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 15 Weeks
- Case Connection :
- COLLECTOR
- Power - Max :
- 2.4W
- Transistor Application :
- SWITCHING
- Collector Emitter Breakdown Voltage :
- 100V
- Height :
- 1.6mm
- Operating Temperature :
- -55°C~150°C TJ
- Max Collector Current :
- 2.5A
- Published :
- 2007
- Frequency :
- 175MHz
- Packaging :
- Tape and Reel (TR)
- Peak Reflow Temperature (Cel) :
- 260
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 100V
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- NPN
- Power Dissipation :
- 4.46W
- Max Breakdown Voltage :
- 100V
- Max Power Dissipation :
- 4.46W
- Mounting Type :
- Surface Mount
- Base Part Number :
- ZXTN25100D
- Vce Saturation (Max) @ Ib, Ic :
- 345mV @ 250mA, 2.5A
- ECCN Code :
- EAR99
- Terminal Form :
- Flat
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PSSO-F3
- Transistor Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 7V
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Datasheets
- ZXTN25100DZTA
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
ZXTN25100DZTA Overview
In this device, the DC current gain is 300 @ 10mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 345mV @ 250mA, 2.5A.With the emitter base voltage set at 7V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 175MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 2.5A volts at Single BJT transistors maximum.
ZXTN25100DZTA Features
the DC current gain for this device is 300 @ 10mA 2V
the vce saturation(Max) is 345mV @ 250mA, 2.5A
the emitter base voltage is kept at 7V
a transition frequency of 175MHz
ZXTN25100DZTA Applications
There are a lot of Diodes Incorporated
ZXTN25100DZTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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