ZXTN25100DGTA
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- Mfr.Part #
- ZXTN25100DGTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 100V 3A SOT223-3
- Stock
- 149
- In Stock ：
- 149
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Mount :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 7V
- Power - Max :
- 3W
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Weight :
- 7.994566mg
- Gain Bandwidth Product :
- 175MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency :
- 175MHz
- Factory Lead Time :
- 15 Weeks
- Max Junction Temperature (Tj) :
- 150°C
- Collector Emitter Saturation Voltage :
- 200mV
- Max Breakdown Voltage :
- 100V
- Pin Count :
- 4
- Terminal Position :
- Dual
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Number of Pins :
- 4
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Type :
- NPN
- Height :
- 1.8mm
- Terminal Form :
- Gull wing
- Radiation Hardening :
- No
- hFE Min :
- 300
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 10mA 2V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 600mA, 3A
- Case Connection :
- COLLECTOR
- Collector Emitter Breakdown Voltage :
- 130V
- Polarity/Channel Type :
- NPN
- Pbfree Code :
- No
- Mounting Type :
- Surface Mount
- Width :
- 3.7mm
- Packaging :
- Tape and Reel (TR)
- Published :
- 2007
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 5.3W
- Terminal Finish :
- Matte Tin (Sn)
- Package / Case :
- TO-261-4, TO-261AA
- Length :
- 6.7mm
- Collector Emitter Voltage (VCEO) :
- 100V
- JESD-609 Code :
- e3
- Collector Base Voltage (VCBO) :
- 180V
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 4
- Transition Frequency :
- 175MHz
- Max Collector Current :
- 3A
- Power Dissipation :
- 1.2W
- REACH SVHC :
- No SVHC
- Base Part Number :
- ZXTN25100D
- Datasheets
- ZXTN25100DGTA
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
ZXTN25100DGTA Overview
DC current gain in this device equals 300 @ 10mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 200mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 600mA, 3A.An emitter's base voltage can be kept at 7V to gain high efficiency.As a result, the part has a transition frequency of 175MHz.Breakdown input voltage is 100V volts.In extreme cases, the collector current can be as low as 3A volts.
ZXTN25100DGTA Features
the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 500mV @ 600mA, 3A
the emitter base voltage is kept at 7V
a transition frequency of 175MHz
ZXTN25100DGTA Applications
There are a lot of Diodes Incorporated
ZXTN25100DGTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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