ZXTN25100DGQTA

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Mfr.Part #
ZXTN25100DGQTA
Manufacturer
Diodes Incorporated
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
TRANS NPN 100V 3A SOT223-3
Stock
515
In Stock :
515

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Packaging :
Tape and Reel (TR)
Transistor Type :
NPN
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Terminal Finish :
Matte Tin (Sn)
Factory Lead Time :
13 Weeks
JESD-609 Code :
e3
RoHS Status :
ROHS3 Compliant
Max Breakdown Voltage :
100V
Power - Max :
1.2W
Package / Case :
TO-261-4, TO-261AA
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Collector Emitter Voltage (VCEO) :
500mV
Published :
2015
Mount :
Surface Mount
Vce Saturation (Max) @ Ib, Ic :
500mV @ 600mA, 3A
Frequency - Transition :
175MHz
DC Current Gain (hFE) (Min) @ Ic, Vce :
300 @ 10mA 2V
Collector Emitter Breakdown Voltage :
100V
Max Power Dissipation :
1.2W
Mounting Type :
Surface Mount
Max Collector Current :
3A
ECCN Code :
EAR99
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Collector Cutoff (Max) :
50nA ICBO
Operating Temperature :
-55°C~150°C TJ
Reach Compliance Code :
not_compliant
Datasheets
ZXTN25100DGQTA
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated ZXTN25100DGQTA from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-261-4, TO-261AA, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, ZXTN25100DGQTA pinout, ZXTN25100DGQTA datasheet PDF, ZXTN25100DGQTA amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated ZXTN25100DGQTA ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated ZXTN25100DGQTA


NPN -55°C~150°C TJ 50nA ICBO TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount

ZXTN25100DGQTA Overview


In this device, the DC current gain is 300 @ 10mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 600mA, 3A.An input voltage of 100V volts is the breakdown voltage.Maximum collector currents can be below 3A volts.

ZXTN25100DGQTA Features


the DC current gain for this device is 300 @ 10mA 2V
the vce saturation(Max) is 500mV @ 600mA, 3A


ZXTN25100DGQTA Applications


There are a lot of Diodes Incorporated
ZXTN25100DGQTA applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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