ZXTN25060BZTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 10mA 2V

REACH SVHC :

No SVHC

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Height :

1.6mm

Published :

2006

Width :

2.6mm

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Transistor Type :

NPN

JESD-30 Code :

R-PSSO-F3

Pin Count :

3

Collector Emitter Saturation Voltage :

305mV

Base Part Number :

ZXTN25060B

Factory Lead Time :

14 Weeks

Weight :

51.993025mg

Max Breakdown Voltage :

60V

Terminal Form :

Flat

Pbfree Code :

yes

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Package / Case :

TO-243AA

Radiation Hardening :

No

Gain Bandwidth Product :

185MHz

Number of Pins :

4

Packaging :

Tape and Reel (TR)

Max Collector Current :

5A

Polarity/Channel Type :

NPN

Collector Emitter Breakdown Voltage :

60V

Vce Saturation (Max) @ Ib, Ic :

305mV @ 500mA, 5A

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

ECCN Code :

EAR99

Number of Elements :

1

Length :

4.6mm

Power - Max :

2.4W

Case Connection :

COLLECTOR

Collector Emitter Voltage (VCEO) :

60V

Transition Frequency :

185MHz

Emitter Base Voltage (VEBO) :

7V

Terminal Finish :

Matte Tin (Sn)

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

40

Number of Terminations :

3

Collector Base Voltage (VCBO) :

150V

Current - Collector Cutoff (Max) :

50nA ICBO

Max Power Dissipation :

4.46W

Max Frequency :

185MHz