ZXTN25040DFHTA
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- Mfr.Part #
- ZXTN25040DFHTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 40V 4A SOT23-3
- Stock
- 9
- In Stock ：
- 9
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Continuous Collector Current :
- 4A
- Emitter Base Voltage (VEBO) :
- 7V
- Power Dissipation :
- 1.81W
- Length :
- 3.05mm
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- NPN
- Terminal Form :
- Gull wing
- Radiation Hardening :
- No
- Pin Count :
- 3
- Mount :
- Surface Mount
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 4A
- Collector Emitter Voltage (VCEO) :
- 40V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 3
- Published :
- 2006
- Transition Frequency :
- 190MHz
- Number of Pins :
- 3
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 10mA 2V
- Voltage - Rated DC :
- 40V
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 130V
- Mounting Type :
- Surface Mount
- Max Breakdown Voltage :
- 40V
- Max Power Dissipation :
- 1.25W
- Peak Reflow Temperature (Cel) :
- 260
- Frequency :
- 190MHz
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Pbfree Code :
- yes
- Transistor Application :
- SWITCHING
- hFE Min :
- 300
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Base Part Number :
- ZXTN25040D
- Operating Temperature :
- -55°C~150°C TJ
- Gain Bandwidth Product :
- 190MHz
- Width :
- 1.4mm
- Factory Lead Time :
- 11 Weeks
- Weight :
- 7.994566mg
- Vce Saturation (Max) @ Ib, Ic :
- 190mV @ 400mA, 4A
- Current Rating :
- 4A
- Terminal Finish :
- Matte Tin (Sn)
- Collector Emitter Breakdown Voltage :
- 40V
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- 210mV
- Height :
- 1mm
- Datasheets
- ZXTN25040DFHTA
ZXTN25040DFHTA Documents
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
ZXTN25040DFHTA Overview
This device has a DC current gain of 300 @ 10mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 210mV.A VCE saturation (Max) of 190mV @ 400mA, 4A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 4A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.This device has a current rating of 4A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 190MHz.A breakdown input voltage of 40V volts can be used.A maximum collector current of 4A volts is possible.
ZXTN25040DFHTA Features
the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of 210mV
the vce saturation(Max) is 190mV @ 400mA, 4A
the emitter base voltage is kept at 7V
the current rating of this device is 4A
a transition frequency of 190MHz
ZXTN25040DFHTA Applications
There are a lot of Diodes Incorporated
ZXTN25040DFHTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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