ZXTN25040DFHTA
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- Mfr.Part #
- ZXTN25040DFHTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 40V 4A SOT23-3
- Stock
- 9
- In Stock ：
- 9
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 300
- Length :
- 3.05mm
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Frequency :
- 190MHz
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Saturation Voltage :
- 210mV
- JESD-609 Code :
- e3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Base Part Number :
- ZXTN25040D
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 10mA 2V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 190MHz
- Polarity/Channel Type :
- NPN
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Terminal Form :
- Gull wing
- Collector Base Voltage (VCBO) :
- 130V
- Transistor Type :
- NPN
- Max Collector Current :
- 4A
- Max Breakdown Voltage :
- 40V
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Gain Bandwidth Product :
- 190MHz
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Current Rating :
- 4A
- Factory Lead Time :
- 11 Weeks
- Power Dissipation :
- 1.81W
- Height :
- 1mm
- Continuous Collector Current :
- 4A
- Vce Saturation (Max) @ Ib, Ic :
- 190mV @ 400mA, 4A
- Number of Terminations :
- 3
- Published :
- 2006
- Mounting Type :
- Surface Mount
- Weight :
- 7.994566mg
- Element Configuration :
- Single
- Width :
- 1.4mm
- Collector Emitter Voltage (VCEO) :
- 40V
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Voltage - Rated DC :
- 40V
- Collector Emitter Breakdown Voltage :
- 40V
- Max Power Dissipation :
- 1.25W
- Terminal Finish :
- Matte Tin (Sn)
- Peak Reflow Temperature (Cel) :
- 260
- Emitter Base Voltage (VEBO) :
- 7V
- Datasheets
- ZXTN25040DFHTA
ZXTN25040DFHTA Documents
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
ZXTN25040DFHTA Overview
This device has a DC current gain of 300 @ 10mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 210mV.A VCE saturation (Max) of 190mV @ 400mA, 4A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 4A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.This device has a current rating of 4A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 190MHz.A breakdown input voltage of 40V volts can be used.A maximum collector current of 4A volts is possible.
ZXTN25040DFHTA Features
the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of 210mV
the vce saturation(Max) is 190mV @ 400mA, 4A
the emitter base voltage is kept at 7V
the current rating of this device is 4A
a transition frequency of 190MHz
ZXTN25040DFHTA Applications
There are a lot of Diodes Incorporated
ZXTN25040DFHTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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