ZXTN2010A

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Mfr.Part #
ZXTN2010A
Manufacturer
Diodes Incorporated
Package / Case
E-Line-3
Datasheet
Download
Description
TRANS NPN 60V 4.5A E-LINE
Stock
12,303
In Stock :
12,303

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Continuous Collector Current :
4.5A
Lead Free :
Lead Free
Max Power Dissipation :
1W
Collector Emitter Voltage (VCEO) :
60V
Package / Case :
E-Line-3
Element Configuration :
Single
Mounting Type :
Through Hole
Length :
4.77mm
Factory Lead Time :
30 Weeks
Number of Pins :
3
Base Part Number :
ZXTN2010A
Current Rating :
4.5A
REACH SVHC :
No SVHC
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Radiation Hardening :
No
Voltage - Rated DC :
60V
Packaging :
Bulk
Operating Temperature :
-55°C~150°C TJ
Height :
4.01mm
ECCN Code :
EAR99
Collector Emitter Breakdown Voltage :
60V
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 2A 1V
Published :
2006
Current - Collector Cutoff (Max) :
50nA ICBO
RoHS Status :
ROHS3 Compliant
Mount :
Through Hole
Collector Base Voltage (VCBO) :
150V
Max Collector Current :
4.5A
Emitter Base Voltage (VEBO) :
7V
Transistor Type :
NPN
JESD-609 Code :
e3
Terminal Finish :
Matte Tin (Sn)
Vce Saturation (Max) @ Ib, Ic :
210mV @ 200mA, 5A
Width :
2.41mm
Gain Bandwidth Product :
130MHz
Datasheets
ZXTN2010A
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated ZXTN2010A from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:E-Line-3, Mounting Type:Through Hole, Number of Pins:3, Base Part Number:ZXTN2010A, Operating Temperature:-55°C~150°C TJ, ZXTN2010A pinout, ZXTN2010A datasheet PDF, ZXTN2010A amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated ZXTN2010A ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated ZXTN2010A


NPN -55°C~150°C TJ 50nA ICBO E-Line-3 Bulk Through Hole

ZXTN2010A Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 2A 1V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 210mV @ 200mA, 5A.In order to achieve high efficiency, the continuous collector voltage should be kept at 4.5A.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 4.5A.Collector current can be as low as 4.5A volts at its maximum.

ZXTN2010A Features


the DC current gain for this device is 100 @ 2A 1V
the vce saturation(Max) is 210mV @ 200mA, 5A
the emitter base voltage is kept at 7V
the current rating of this device is 4.5A


ZXTN2010A Applications


There are a lot of Diodes Incorporated
ZXTN2010A applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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