ZXTN2010A

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Mfr.Part #
ZXTN2010A
Manufacturer
Diodes Incorporated
Package / Case
E-Line-3
Datasheet
Download
Description
TRANS NPN 60V 4.5A E-LINE
Stock
12,303
In Stock :
12,303

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Published :
2006
Current - Collector Cutoff (Max) :
50nA ICBO
Number of Pins :
3
Element Configuration :
Single
REACH SVHC :
No SVHC
Operating Temperature :
-55°C~150°C TJ
Factory Lead Time :
30 Weeks
Current Rating :
4.5A
Mounting Type :
Through Hole
Emitter Base Voltage (VEBO) :
7V
RoHS Status :
ROHS3 Compliant
Terminal Finish :
Matte Tin (Sn)
Gain Bandwidth Product :
130MHz
Height :
4.01mm
Collector Emitter Voltage (VCEO) :
60V
ECCN Code :
EAR99
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 2A 1V
Max Power Dissipation :
1W
Lead Free :
Lead Free
Mount :
Through Hole
Radiation Hardening :
No
JESD-609 Code :
e3
Width :
2.41mm
Package / Case :
E-Line-3
Transistor Type :
NPN
Continuous Collector Current :
4.5A
Voltage - Rated DC :
60V
Length :
4.77mm
Max Collector Current :
4.5A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vce Saturation (Max) @ Ib, Ic :
210mV @ 200mA, 5A
Packaging :
Bulk
Collector Base Voltage (VCBO) :
150V
Base Part Number :
ZXTN2010A
Collector Emitter Breakdown Voltage :
60V
Datasheets
ZXTN2010A
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated ZXTN2010A from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Package / Case:E-Line-3, Base Part Number:ZXTN2010A, ZXTN2010A pinout, ZXTN2010A datasheet PDF, ZXTN2010A amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated ZXTN2010A ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated ZXTN2010A


NPN -55°C~150°C TJ 50nA ICBO E-Line-3 Bulk Through Hole

ZXTN2010A Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 2A 1V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 210mV @ 200mA, 5A.In order to achieve high efficiency, the continuous collector voltage should be kept at 4.5A.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 4.5A.Collector current can be as low as 4.5A volts at its maximum.

ZXTN2010A Features


the DC current gain for this device is 100 @ 2A 1V
the vce saturation(Max) is 210mV @ 200mA, 5A
the emitter base voltage is kept at 7V
the current rating of this device is 4.5A


ZXTN2010A Applications


There are a lot of Diodes Incorporated
ZXTN2010A applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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