ZXTN2005GTA
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- Mfr.Part #
- ZXTN2005GTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 25V 7A SOT223-3
- Stock
- 11,757
- In Stock ：
- 11,757
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 7V
- Packaging :
- Tape and Reel (TR)
- Collector Base Voltage (VCBO) :
- 60V
- Max Power Dissipation :
- 3W
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- Case Connection :
- COLLECTOR
- Max Breakdown Voltage :
- 25V
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Finish :
- Matte Tin (Sn)
- Transition Frequency :
- 150MHz
- Voltage - Rated DC :
- 25V
- Terminal Form :
- Gull wing
- Width :
- 3.7mm
- Gain Bandwidth Product :
- 150MHz
- Terminal Position :
- Dual
- Power Dissipation :
- 3W
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 1A 1V
- Base Part Number :
- ZXTN2005
- Length :
- 6.7mm
- Collector Emitter Voltage (VCEO) :
- 25V
- Polarity/Channel Type :
- NPN
- Transistor Type :
- NPN
- Package / Case :
- TO-261-4, TO-261AA
- Weight :
- 7.994566mg
- Pin Count :
- 4
- Number of Terminations :
- 4
- Max Collector Current :
- 7A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Continuous Collector Current :
- 7A
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Operating Temperature :
- -55°C~150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 230mV @ 150mA, 6.5A
- Number of Elements :
- 1
- Frequency :
- 150MHz
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 25V
- Lead Free :
- Lead Free
- Pbfree Code :
- No
- Number of Pins :
- 4
- JESD-609 Code :
- e3
- Published :
- 2006
- Height :
- 1.65mm
- Current Rating :
- 7A
- Factory Lead Time :
- 15 Weeks
- Datasheets
- ZXTN2005GTA
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
ZXTN2005GTA Overview
This device has a DC current gain of 300 @ 1A 1V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of 7A is necessary for high efficiency.The base voltage of the emitter can be kept at 7V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 7A.In this part, there is a transition frequency of 150MHz.As a result, it can handle voltages as low as 25V volts.The maximum collector current is 7A volts.
ZXTN2005GTA Features
the DC current gain for this device is 300 @ 1A 1V
the vce saturation(Max) is 230mV @ 150mA, 6.5A
the emitter base voltage is kept at 7V
the current rating of this device is 7A
a transition frequency of 150MHz
ZXTN2005GTA Applications
There are a lot of Diodes Incorporated
ZXTN2005GTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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