ZXTN19100CZTA
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- Mfr.Part #
- ZXTN19100CZTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 100V 5.25A SOT89-3
- Stock
- 23
- In Stock ：
- 23
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- ZXTN19100C
- Frequency :
- 150MHz
- Power Dissipation :
- 4.46W
- Collector Emitter Voltage (VCEO) :
- 100V
- JESD-30 Code :
- R-PSSO-F3
- Terminal Finish :
- Matte Tin (Sn)
- Power - Max :
- 2.4W
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 2V
- Collector Emitter Breakdown Voltage :
- 100V
- ECCN Code :
- EAR99
- Continuous Collector Current :
- 5.25A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Peak Reflow Temperature (Cel) :
- 260
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 525mA, 5.25A
- Transition Frequency :
- 150MHz
- REACH SVHC :
- No SVHC
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Terminal Form :
- Flat
- Length :
- 4.6mm
- Number of Terminations :
- 3
- Package / Case :
- TO-243AA
- Polarity/Channel Type :
- NPN
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 4.46W
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 200V
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Published :
- 2008
- Width :
- 2.6mm
- Pbfree Code :
- yes
- Emitter Base Voltage (VEBO) :
- 7V
- Weight :
- 130.492855mg
- Collector Emitter Saturation Voltage :
- 65mV
- Number of Pins :
- 4
- Factory Lead Time :
- 15 Weeks
- Height :
- 1.6mm
- Max Breakdown Voltage :
- 100V
- Case Connection :
- COLLECTOR
- Gain Bandwidth Product :
- 150MHz
- Radiation Hardening :
- No
- Max Collector Current :
- 5.25A
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Transistor Type :
- NPN
- Datasheets
- ZXTN19100CZTA
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
ZXTN19100CZTA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 100mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 65mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 350mV @ 525mA, 5.25A.Single BJT transistor is recommended to keep the continuous collector voltage at 5.25A in order to achieve high efficiency.The emitter base voltage can be kept at 7V for high efficiency.The part has a transition frequency of 150MHz.The breakdown input voltage is 100V volts.Single BJT transistor is possible to have a collector current as low as 5.25A volts at Single BJT transistors maximum.
ZXTN19100CZTA Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of 65mV
the vce saturation(Max) is 350mV @ 525mA, 5.25A
the emitter base voltage is kept at 7V
a transition frequency of 150MHz
ZXTN19100CZTA Applications
There are a lot of Diodes Incorporated
ZXTN19100CZTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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