ZXTN19100CZTA
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- Mfr.Part #
- ZXTN19100CZTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 100V 5.25A SOT89-3
- Stock
- 23
- In Stock ：
- 23
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- Terminal Finish :
- Matte Tin (Sn)
- Published :
- 2008
- Collector Emitter Saturation Voltage :
- 65mV
- Mounting Type :
- Surface Mount
- Base Part Number :
- ZXTN19100C
- Collector Emitter Voltage (VCEO) :
- 100V
- Polarity/Channel Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 2V
- JESD-30 Code :
- R-PSSO-F3
- Power Dissipation :
- 4.46W
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- REACH SVHC :
- No SVHC
- Max Collector Current :
- 5.25A
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Breakdown Voltage :
- 100V
- Case Connection :
- COLLECTOR
- Number of Pins :
- 4
- Width :
- 2.6mm
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Transition Frequency :
- 150MHz
- Number of Terminations :
- 3
- Package / Case :
- TO-243AA
- Peak Reflow Temperature (Cel) :
- 260
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Transistor Type :
- NPN
- Terminal Form :
- Flat
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Weight :
- 130.492855mg
- Mount :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 100V
- Continuous Collector Current :
- 5.25A
- Max Power Dissipation :
- 4.46W
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 150MHz
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 525mA, 5.25A
- Emitter Base Voltage (VEBO) :
- 7V
- Pbfree Code :
- yes
- Power - Max :
- 2.4W
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 15 Weeks
- Frequency :
- 150MHz
- Collector Base Voltage (VCBO) :
- 200V
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Height :
- 1.6mm
- Length :
- 4.6mm
- Datasheets
- ZXTN19100CZTA
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
ZXTN19100CZTA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 100mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 65mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 350mV @ 525mA, 5.25A.Single BJT transistor is recommended to keep the continuous collector voltage at 5.25A in order to achieve high efficiency.The emitter base voltage can be kept at 7V for high efficiency.The part has a transition frequency of 150MHz.The breakdown input voltage is 100V volts.Single BJT transistor is possible to have a collector current as low as 5.25A volts at Single BJT transistors maximum.
ZXTN19100CZTA Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of 65mV
the vce saturation(Max) is 350mV @ 525mA, 5.25A
the emitter base voltage is kept at 7V
a transition frequency of 150MHz
ZXTN19100CZTA Applications
There are a lot of Diodes Incorporated
ZXTN19100CZTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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