ZXTN19100CFFTA
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- Mfr.Part #
- ZXTN19100CFFTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-23-3 Flat Leads
- Datasheet
- Download
- Description
- TRANS NPN 100V 4.5A SOT23F
- Stock
- 1,225
- In Stock ：
- 1,225
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Weight :
- 48.789529mg
- Transistor Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 7V
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Collector Emitter Saturation Voltage :
- 60mV
- Gain Bandwidth Product :
- 150MHz
- Peak Reflow Temperature (Cel) :
- 260
- Max Power Dissipation :
- 1.5W
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Max Collector Current :
- 4.5A
- Polarity/Channel Type :
- NPN
- ECCN Code :
- EAR99
- Max Breakdown Voltage :
- 100V
- Collector Emitter Voltage (VCEO) :
- 100V
- Collector Emitter Breakdown Voltage :
- 100V
- Height :
- 1mm
- Vce Saturation (Max) @ Ib, Ic :
- 235mV @ 450mA, 4.5A
- Terminal Position :
- Dual
- Transition Frequency :
- 150MHz
- Pin Count :
- 3
- Collector Base Voltage (VCBO) :
- 200V
- Package / Case :
- SOT-23-3 Flat Leads
- hFE Min :
- 200
- Published :
- 2007
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 2V
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- REACH SVHC :
- No SVHC
- Frequency :
- 150MHz
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Radiation Hardening :
- No
- Factory Lead Time :
- 15 Weeks
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Power Dissipation :
- 16W
- Width :
- 1.7mm
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Length :
- 3mm
- Continuous Collector Current :
- 4.5A
- Base Part Number :
- ZXTN19100C
- Terminal Finish :
- Matte Tin (Sn)
- Datasheets
- ZXTN19100CFFTA
ZXTN19100CFFTA Documents
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN SOT-23-3 Flat Leads Tape & Reel (TR) Surface Mount
ZXTN19100CFFTA Overview
This device has a DC current gain of 200 @ 100mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 60mV.A VCE saturation (Max) of 235mV @ 450mA, 4.5A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 4.5A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.As you can see, the part has a transition frequency of 150MHz.A breakdown input voltage of 100V volts can be used.A maximum collector current of 4.5A volts is possible.
ZXTN19100CFFTA Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of 60mV
the vce saturation(Max) is 235mV @ 450mA, 4.5A
the emitter base voltage is kept at 7V
a transition frequency of 150MHz
ZXTN19100CFFTA Applications
There are a lot of Diodes Incorporated
ZXTN19100CFFTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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