ZXTN19100CFFTA
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- Mfr.Part #
- ZXTN19100CFFTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-23-3 Flat Leads
- Datasheet
- Download
- Description
- TRANS NPN 100V 4.5A SOT23F
- Stock
- 1,225
- In Stock ：
- 1,225
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -55°C~150°C TJ
- Transition Frequency :
- 150MHz
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Matte Tin (Sn)
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Transistor Type :
- NPN
- Mount :
- Surface Mount
- JESD-609 Code :
- e3
- Max Breakdown Voltage :
- 100V
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- REACH SVHC :
- No SVHC
- Base Part Number :
- ZXTN19100C
- Factory Lead Time :
- 15 Weeks
- Packaging :
- Tape and Reel (TR)
- hFE Min :
- 200
- Height :
- 1mm
- Polarity/Channel Type :
- NPN
- Terminal Position :
- Dual
- Package / Case :
- SOT-23-3 Flat Leads
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 4.5A
- Frequency :
- 150MHz
- Width :
- 1.7mm
- Pin Count :
- 3
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 16W
- Collector Emitter Breakdown Voltage :
- 100V
- Collector Emitter Saturation Voltage :
- 60mV
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 100V
- Weight :
- 48.789529mg
- Vce Saturation (Max) @ Ib, Ic :
- 235mV @ 450mA, 4.5A
- Number of Elements :
- 1
- Max Power Dissipation :
- 1.5W
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 2V
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 7V
- Gain Bandwidth Product :
- 150MHz
- Collector Base Voltage (VCBO) :
- 200V
- Length :
- 3mm
- Continuous Collector Current :
- 4.5A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Published :
- 2007
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 3
- Datasheets
- ZXTN19100CFFTA
ZXTN19100CFFTA Documents
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN SOT-23-3 Flat Leads Tape & Reel (TR) Surface Mount
ZXTN19100CFFTA Overview
This device has a DC current gain of 200 @ 100mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 60mV.A VCE saturation (Max) of 235mV @ 450mA, 4.5A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 4.5A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.As you can see, the part has a transition frequency of 150MHz.A breakdown input voltage of 100V volts can be used.A maximum collector current of 4.5A volts is possible.
ZXTN19100CFFTA Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of 60mV
the vce saturation(Max) is 235mV @ 450mA, 4.5A
the emitter base voltage is kept at 7V
a transition frequency of 150MHz
ZXTN19100CFFTA Applications
There are a lot of Diodes Incorporated
ZXTN19100CFFTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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