ZXTN19100CFFTA
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- Mfr.Part #
- ZXTN19100CFFTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- SOT-23-3 Flat Leads
- Datasheet
- Download
- Description
- TRANS NPN 100V 4.5A SOT23F
- Stock
- 1,225
- In Stock ：
- 1,225
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- Gain Bandwidth Product :
- 150MHz
- Vce Saturation (Max) @ Ib, Ic :
- 235mV @ 450mA, 4.5A
- Terminal Position :
- Dual
- Package / Case :
- SOT-23-3 Flat Leads
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Emitter Base Voltage (VEBO) :
- 7V
- Height :
- 1mm
- Max Collector Current :
- 4.5A
- Number of Terminations :
- 3
- REACH SVHC :
- No SVHC
- Pin Count :
- 3
- Max Power Dissipation :
- 1.5W
- Collector Base Voltage (VCBO) :
- 200V
- Collector Emitter Breakdown Voltage :
- 100V
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e3
- Continuous Collector Current :
- 4.5A
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Length :
- 3mm
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 16W
- Collector Emitter Voltage (VCEO) :
- 100V
- Weight :
- 48.789529mg
- Terminal Finish :
- Matte Tin (Sn)
- Polarity/Channel Type :
- NPN
- Width :
- 1.7mm
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Transition Frequency :
- 150MHz
- Element Configuration :
- Single
- Max Breakdown Voltage :
- 100V
- Base Part Number :
- ZXTN19100C
- Mount :
- Surface Mount
- Published :
- 2007
- Factory Lead Time :
- 15 Weeks
- Collector Emitter Saturation Voltage :
- 60mV
- Peak Reflow Temperature (Cel) :
- 260
- Frequency :
- 150MHz
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 2V
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- 40
- hFE Min :
- 200
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- ZXTN19100CFFTA
ZXTN19100CFFTA Documents
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN SOT-23-3 Flat Leads Tape & Reel (TR) Surface Mount
ZXTN19100CFFTA Overview
This device has a DC current gain of 200 @ 100mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 60mV.A VCE saturation (Max) of 235mV @ 450mA, 4.5A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 4.5A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.As you can see, the part has a transition frequency of 150MHz.A breakdown input voltage of 100V volts can be used.A maximum collector current of 4.5A volts is possible.
ZXTN19100CFFTA Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of 60mV
the vce saturation(Max) is 235mV @ 450mA, 4.5A
the emitter base voltage is kept at 7V
a transition frequency of 150MHz
ZXTN19100CFFTA Applications
There are a lot of Diodes Incorporated
ZXTN19100CFFTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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