ZXM64P035L3

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Matte Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

46nC @ 10V

Rds On (Max) @ Id, Vgs :

75m Ω @ 2.4A, 10V

Number of Elements :

1

Height :

4.82mm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-30 Code :

R-PSFM-T3

Current - Continuous Drain (Id) @ 25°C :

3.3A Ta 12A Tc

Package / Case :

TO-220-3

Mount :

Through Hole

Mounting Type :

Through Hole

Current Rating :

-12A

Packaging :

Bulk

Rise Time :

6.2ns

Length :

16.51mm

ECCN Code :

EAR99

Recovery Time :

30.2 ns

Element Configuration :

Single

Turn On Delay Time :

4.4 ns

Fall Time (Typ) :

29.2 ns

Drain to Source Voltage (Vdss) :

35V

Lead Free :

Lead Free

Number of Channels :

1

Pin Count :

3

Turn-Off Delay Time :

40 ns

Input Capacitance (Ciss) (Max) @ Vds :

825pF @ 25V

Vgs(th) (Max) @ Id :

1V @ 250μA

Width :

10.66mm

Time@Peak Reflow Temperature-Max (s) :

40

Weight :

6.000006g

RoHS Status :

ROHS3 Compliant

Voltage - Rated DC :

-35V

Pbfree Code :

No

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Power Dissipation-Max :

1.5W Ta 20W Tc

JESD-609 Code :

e3

JEDEC-95 Code :

TO-220AB

Number of Terminations :

3

Continuous Drain Current (ID) :

12A

Published :

2006

Operating Temperature :

-55°C~150°C TJ

FET Type :

P-Channel

Peak Reflow Temperature (Cel) :

260

Vgs (Max) :

±20V

Power Dissipation :

20W

Transistor Element Material :

SILICON

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

20V