ZXM61P03FTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

4.8nC @ 10V

Number of Terminations :

3

Additional Feature :

LOW THRESHOLD

Current Rating :

-1.1A

Pin Count :

3

Published :

2006

Width :

1.4mm

Continuous Drain Current (ID) :

1.1A

Turn On Delay Time :

1.9 ns

Turn-Off Delay Time :

8.9 ns

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

-30V

FET Type :

P-Channel

Length :

3.04mm

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

1.1A Ta

Termination :

SMD/SMT

Number of Pins :

3

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Power Dissipation-Max :

625mW Ta

Number of Channels :

1

Number of Elements :

1

Weight :

7.994566mg

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Threshold Voltage :

1V

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

1V @ 250μA

Package / Case :

TO-236-3, SC-59, SOT-23-3

Dual Supply Voltage :

-30V

Nominal Vgs :

-1 V

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

Fall Time (Typ) :

2.9 ns

Voltage - Rated DC :

-30V

Max Junction Temperature (Tj) :

150°C

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Power Dissipation :

625mW

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Factory Lead Time :

17 Weeks

Rds On (Max) @ Id, Vgs :

350m Ω @ 600mA, 10V

Contact Plating :

Tin

Time@Peak Reflow Temperature-Max (s) :

40

Rise Time :

2.9ns

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

JESD-609 Code :

e3

Height :

1.1mm

REACH SVHC :

No SVHC

Drain to Source Voltage (Vdss) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

140pF @ 25V

Resistance :

350mOhm