ZXM61P03FTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

1V @ 250μA

Length :

3.04mm

Power Dissipation :

625mW

Package / Case :

TO-236-3, SC-59, SOT-23-3

Dual Supply Voltage :

-30V

Drain to Source Voltage (Vdss) :

30V

Vgs (Max) :

±20V

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

40

Number of Pins :

3

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Pin Count :

3

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

20V

Height :

1.1mm

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

1.1A

Nominal Vgs :

-1 V

Factory Lead Time :

17 Weeks

Threshold Voltage :

1V

Transistor Element Material :

SILICON

Fall Time (Typ) :

2.9 ns

Max Junction Temperature (Tj) :

150°C

Mount :

Surface Mount

Weight :

7.994566mg

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Turn-Off Delay Time :

8.9 ns

Published :

2006

Resistance :

350mOhm

JESD-609 Code :

e3

Turn On Delay Time :

1.9 ns

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

-30V

Voltage - Rated DC :

-30V

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

350m Ω @ 600mA, 10V

FET Type :

P-Channel

Input Capacitance (Ciss) (Max) @ Vds :

140pF @ 25V

Current Rating :

-1.1A

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

1.1A Ta

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

4.8nC @ 10V

Width :

1.4mm

Number of Elements :

1

Power Dissipation-Max :

625mW Ta

Contact Plating :

Tin

Rise Time :

2.9ns

Additional Feature :

LOW THRESHOLD

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Channels :

1

Number of Terminations :

3

Termination :

SMD/SMT