ZXM61P03FTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

1V @ 250μA

Rds On (Max) @ Id, Vgs :

350m Ω @ 600mA, 10V

Height :

1.1mm

Current Rating :

-1.1A

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

ECCN Code :

EAR99

Power Dissipation-Max :

625mW Ta

Mounting Type :

Surface Mount

Additional Feature :

LOW THRESHOLD

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Max Junction Temperature (Tj) :

150°C

Factory Lead Time :

17 Weeks

Nominal Vgs :

-1 V

Vgs (Max) :

±20V

Length :

3.04mm

Power Dissipation :

625mW

Package / Case :

TO-236-3, SC-59, SOT-23-3

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Single

Termination :

SMD/SMT

Width :

1.4mm

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

1.9 ns

Number of Channels :

1

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

P-Channel

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

4.8nC @ 10V

Turn-Off Delay Time :

8.9 ns

Published :

2006

Dual Supply Voltage :

-30V

Continuous Drain Current (ID) :

1.1A

Drain to Source Voltage (Vdss) :

30V

Mount :

Surface Mount

Fall Time (Typ) :

2.9 ns

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

1.1A Ta

Rise Time :

2.9ns

Pin Count :

3

Contact Plating :

Tin

Weight :

7.994566mg

Drain to Source Breakdown Voltage :

-30V

Threshold Voltage :

1V

Resistance :

350mOhm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Position :

Dual

Transistor Application :

SWITCHING

Radiation Hardening :

No

Voltage - Rated DC :

-30V

Number of Pins :

3

Number of Terminations :

3

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

140pF @ 25V