ZXM61P03FTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

-30V

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

1.1A Ta

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

625mW Ta

Pbfree Code :

yes

REACH SVHC :

No SVHC

Contact Plating :

Tin

JESD-609 Code :

e3

Terminal Form :

Gull wing

Number of Channels :

1

Turn-Off Delay Time :

8.9 ns

Resistance :

350mOhm

Vgs(th) (Max) @ Id :

1V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

140pF @ 25V

Mount :

Surface Mount

Max Junction Temperature (Tj) :

150°C

Turn On Delay Time :

1.9 ns

Threshold Voltage :

1V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Time@Peak Reflow Temperature-Max (s) :

40

Nominal Vgs :

-1 V

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

2.9 ns

FET Type :

P-Channel

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Dual Supply Voltage :

-30V

Transistor Element Material :

SILICON

Weight :

7.994566mg

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Length :

3.04mm

Transistor Application :

SWITCHING

Rise Time :

2.9ns

Termination :

SMD/SMT

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

4.8nC @ 10V

Width :

1.4mm

Power Dissipation :

625mW

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

350m Ω @ 600mA, 10V

Height :

1.1mm

Radiation Hardening :

No

Pin Count :

3

Additional Feature :

LOW THRESHOLD

Continuous Drain Current (ID) :

1.1A

Element Configuration :

Single

Terminal Position :

Dual

Voltage - Rated DC :

-30V

Number of Terminations :

3

Current Rating :

-1.1A

Drain to Source Voltage (Vdss) :

30V

Factory Lead Time :

17 Weeks

Published :

2006

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free