ZXM61N03FTC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

625mW Ta

Rds On (Max) @ Id, Vgs :

220m Ω @ 910mA, 10V

Current Rating :

1.2A

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

MATTE TIN

Mount :

Surface Mount

Weight :

7.994566mg

Terminal Form :

Gull wing

Lead Free :

Lead Free

Turn-Off Delay Time :

5.8 ns

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Pin Count :

3

Turn On Delay Time :

1.9 ns

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Rise Time :

2.5ns

Terminal Position :

Dual

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Number of Channels :

1

Drain-source On Resistance-Max :

0.22Ohm

Radiation Hardening :

No

Pbfree Code :

yes

Published :

2012

Package / Case :

TO-236-3, SC-59, SOT-23-3

Current - Continuous Drain (Id) @ 25°C :

1.4A Ta

Drain to Source Breakdown Voltage :

30V

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

4.1nC @ 10V

Number of Elements :

1

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

1V @ 250μA

Voltage - Rated DC :

30V

Power Dissipation :

625mW

FET Type :

N-Channel

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

1.4A

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

RoHS Compliant

Fall Time (Typ) :

2.5 ns