ZXM61N02FTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Matte Tin (Sn)

Element Configuration :

Single

Length :

3.04mm

Gate to Source Voltage (Vgs) :

12V

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

LOW THRESHOLD

Turn-Off Delay Time :

7.8 ns

Gate Charge (Qg) (Max) @ Vgs :

3.4nC @ 4.5V

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Current Rating :

1.7A

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Width :

1.4mm

Max Junction Temperature (Tj) :

150°C

Fall Time (Typ) :

4.2 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

1.7A Ta

Pbfree Code :

yes

Factory Lead Time :

17 Weeks

Power Dissipation :

806mW

JESD-609 Code :

e3

Lead Free :

Lead Free

Vgs (Max) :

±12V

Peak Reflow Temperature (Cel) :

260

Nominal Vgs :

700 mV

Termination :

SMD/SMT

Input Capacitance (Ciss) (Max) @ Vds :

160pF @ 15V

Resistance :

180mOhm

Published :

2006

ECCN Code :

EAR99

Number of Pins :

3

Height :

1.1mm

Weight :

7.994566mg

Power Dissipation-Max :

625mW Ta

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

700mV @ 250μA

Number of Channels :

1

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

2.7V 4.5V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Transistor Application :

SWITCHING

Number of Elements :

1

Turn On Delay Time :

2.4 ns

Continuous Drain Current (ID) :

1.7A

FET Type :

N-Channel

Voltage - Rated DC :

20V

Rise Time :

4.2ns

Pin Count :

3

Rds On (Max) @ Id, Vgs :

180m Ω @ 930mA, 4.5V

Drain to Source Breakdown Voltage :

20V

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

40

Dual Supply Voltage :

20V

Number of Terminations :

3