ZXM62P03E6TC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

-30V

FET Type :

P-Channel

Power Dissipation :

625mW

Pbfree Code :

yes

Package / Case :

SOT-23-6

Pin Count :

6

Terminal Position :

Dual

Transistor Element Material :

SILICON

Rise Time :

6.4ns

Gate to Source Voltage (Vgs) :

12V

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

330pF @ 25V

JESD-609 Code :

e3

Published :

2006

Vgs(th) (Max) @ Id :

1V @ 250μA

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Fall Time (Typ) :

6.4 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

10.2nC @ 10V

Length :

3.1mm

Height :

1.3mm

Number of Terminations :

6

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

13.9 ns

Weight :

14.996898mg

Peak Reflow Temperature (Cel) :

260

Drain to Source Voltage (Vdss) :

30V

Mount :

Surface Mount

Power Dissipation-Max :

625mW Ta

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mounting Type :

Surface Mount

Turn On Delay Time :

2.8 ns

Number of Channels :

1

Terminal Finish :

Matte Tin (Sn)

Number of Pins :

6

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

1.5A

Packaging :

Tape and Reel (TR)

Width :

1.8mm

Time@Peak Reflow Temperature-Max (s) :

40

Current - Continuous Drain (Id) @ 25°C :

1.5A Ta

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

230m Ω @ 800mA, 4.5V