ZXM61N03FTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Channels :

1

Gate Charge (Qg) (Max) @ Vgs :

4.1nC @ 10V

Power Dissipation-Max :

625mW Ta

Time@Peak Reflow Temperature-Max (s) :

40

Vgs (Max) :

±20V

Rise Time :

2.5ns

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Nominal Vgs :

1 V

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

1.4A

Published :

2006

Weight :

7.994566mg

Fall Time (Typ) :

2.5 ns

Pin Count :

3

Contact Plating :

Tin

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power Dissipation :

806mW

Drain to Source Breakdown Voltage :

30V

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 25V

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

220m Ω @ 910mA, 10V

Factory Lead Time :

17 Weeks

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

JESD-609 Code :

e3

Additional Feature :

LOW THRESHOLD

Resistance :

220mOhm

Turn-Off Delay Time :

5.8 ns

Length :

3.04mm

Current Rating :

1.2A

Operating Temperature :

-55°C~150°C TJ

Height :

1.02mm

Current - Continuous Drain (Id) @ 25°C :

1.4A Ta

Number of Pins :

3

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Dual Supply Voltage :

30V

Mount :

Surface Mount

Width :

1.4mm

Number of Terminations :

3

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

FET Type :

N-Channel

Voltage - Rated DC :

30V

Radiation Hardening :

No

Turn On Delay Time :

1.9 ns

Vgs(th) (Max) @ Id :

1V @ 250μA

ECCN Code :

EAR99

Termination :

SMD/SMT

Terminal Form :

Gull wing