ZXM61P03FTC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Rise Time :

2.9ns

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Element Configuration :

Single

Number of Elements :

1

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

-30V

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

30V

Current Rating :

-1.1A

Pin Count :

3

Power Dissipation-Max :

625mW Ta

Weight :

7.994566mg

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Height :

1.02mm

Length :

3.04mm

JESD-609 Code :

e3

Published :

2006

Terminal Finish :

Matte Tin (Sn)

Turn On Delay Time :

1.9 ns

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

350m Ω @ 600mA, 10V

Vgs(th) (Max) @ Id :

1V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

140pF @ 25V

Terminal Form :

Gull wing

Lead Free :

Lead Free

Turn-Off Delay Time :

8.9 ns

Number of Channels :

1

Current - Continuous Drain (Id) @ 25°C :

1.1A Ta

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PDSO-G3

Additional Feature :

LOW THRESHOLD

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Width :

1.4mm

Voltage - Rated DC :

-30V

Gate Charge (Qg) (Max) @ Vgs :

4.8nC @ 10V

Fall Time (Typ) :

2.9 ns

Package / Case :

TO-236-3, SC-59, SOT-23-3

Peak Reflow Temperature (Cel) :

260

Continuous Drain Current (ID) :

1.1A

Power Dissipation :

625mW

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.35Ohm

FET Type :

P-Channel

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

40