ZXM61P03FTC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

-30V

Terminal Position :

Dual

Drain to Source Voltage (Vdss) :

30V

Fall Time (Typ) :

2.9 ns

Number of Channels :

1

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

40

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PDSO-G3

Number of Terminations :

3

ECCN Code :

EAR99

Voltage - Rated DC :

-30V

Height :

1.02mm

Power Dissipation :

625mW

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

140pF @ 25V

Turn-Off Delay Time :

8.9 ns

Qualification Status :

Not Qualified

Width :

1.4mm

JESD-609 Code :

e3

Additional Feature :

LOW THRESHOLD

Power Dissipation-Max :

625mW Ta

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

1V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

1.1A Ta

Turn On Delay Time :

1.9 ns

Terminal Form :

Gull wing

Weight :

7.994566mg

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

1.1A

Transistor Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn)

FET Type :

P-Channel

Peak Reflow Temperature (Cel) :

260

Current Rating :

-1.1A

Rds On (Max) @ Id, Vgs :

350m Ω @ 600mA, 10V

Number of Elements :

1

Mount :

Surface Mount

Drain-source On Resistance-Max :

0.35Ohm

Length :

3.04mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Rise Time :

2.9ns

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

4.8nC @ 10V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Published :

2006