ZXM62P03GTA

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Mfr.Part #
ZXM62P03GTA
Manufacturer
Diodes Incorporated
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
MOSFET P-CH 30V 2.9A/4A SOT223
Stock
18,890
In Stock :
18,890

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - FETs, MOSFETs - Single
Packaging :
Tape and Reel (TR)
Published :
2006
Input Capacitance (Ciss) (Max) @ Vds :
330pF @ 25V
Mount :
Surface Mount
Drain to Source Voltage (Vdss) :
30V
Fall Time (Typ) :
10.3 ns
RoHS Status :
RoHS Compliant
Vgs (Max) :
±20V
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Power Dissipation :
2W
Gate to Source Voltage (Vgs) :
20V
Power Dissipation-Max :
2W Ta
Gate Charge (Qg) (Max) @ Vgs :
10.2nC @ 10V
Rise Time :
6.4ns
FET Type :
P-Channel
Number of Channels :
1
Continuous Drain Current (ID) :
4A
Current Rating :
-4A
Operating Temperature :
-55°C~150°C TJ
Rds On (Max) @ Id, Vgs :
150m Ω @ 1.6A, 10V
Lead Free :
Lead Free
Reach Compliance Code :
Unknown
Pin Count :
4
Turn-Off Delay Time :
13.9 ns
Mounting Type :
Surface Mount
Current - Continuous Drain (Id) @ 25°C :
2.9A Ta 4A Tc
Drain to Source Breakdown Voltage :
-30V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Turn On Delay Time :
2.8 ns
Weight :
7.994566mg
Package / Case :
TO-261-4, TO-261AA
Voltage - Rated DC :
-30V
Vgs(th) (Max) @ Id :
1V @ 250μA
Datasheets
ZXM62P03GTA
Introducing Transistors - FETs, MOSFETs - Single Diodes Incorporated ZXM62P03GTA from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Package / Case:TO-261-4, TO-261AA, ZXM62P03GTA pinout, ZXM62P03GTA datasheet PDF, ZXM62P03GTA amp .Beyond Transistors - FETs, MOSFETs - Single Diodes Incorporated ZXM62P03GTA ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated ZXM62P03GTA


P-Channel Tape & Reel (TR) 150m Ω @ 1.6A, 10V ±20V 330pF @ 25V 10.2nC @ 10V 30V TO-261-4, TO-261AA

ZXM62P03GTA Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 330pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -30V.As a result of its turn-off delay time, which is 13.9 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 2.8 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).

ZXM62P03GTA Features


a continuous drain current (ID) of 4A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 13.9 ns
a 30V drain to source voltage (Vdss)


ZXM62P03GTA Applications


There are a lot of Diodes Incorporated
ZXM62P03GTA applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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