ZXM62P03GTA

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Mfr.Part #
ZXM62P03GTA
Manufacturer
Diodes Incorporated
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
MOSFET P-CH 30V 2.9A/4A SOT223
Stock
18,890
In Stock :
18,890

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - FETs, MOSFETs - Single
Mounting Type :
Surface Mount
Number of Channels :
1
Published :
2006
Gate Charge (Qg) (Max) @ Vgs :
10.2nC @ 10V
Current Rating :
-4A
Current - Continuous Drain (Id) @ 25°C :
2.9A Ta 4A Tc
Gate to Source Voltage (Vgs) :
20V
Fall Time (Typ) :
10.3 ns
Lead Free :
Lead Free
Vgs(th) (Max) @ Id :
1V @ 250μA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mount :
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds :
330pF @ 25V
Rds On (Max) @ Id, Vgs :
150m Ω @ 1.6A, 10V
Vgs (Max) :
±20V
Weight :
7.994566mg
Drain to Source Breakdown Voltage :
-30V
Operating Temperature :
-55°C~150°C TJ
Reach Compliance Code :
Unknown
Continuous Drain Current (ID) :
4A
RoHS Status :
RoHS Compliant
Turn-Off Delay Time :
13.9 ns
Voltage - Rated DC :
-30V
Turn On Delay Time :
2.8 ns
Pin Count :
4
Drain to Source Voltage (Vdss) :
30V
Power Dissipation :
2W
Packaging :
Tape and Reel (TR)
Rise Time :
6.4ns
Power Dissipation-Max :
2W Ta
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Package / Case :
TO-261-4, TO-261AA
FET Type :
P-Channel
Datasheets
ZXM62P03GTA
Introducing Transistors - FETs, MOSFETs - Single Diodes Incorporated ZXM62P03GTA from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Channels:1, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-261-4, TO-261AA, ZXM62P03GTA pinout, ZXM62P03GTA datasheet PDF, ZXM62P03GTA amp .Beyond Transistors - FETs, MOSFETs - Single Diodes Incorporated ZXM62P03GTA ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated ZXM62P03GTA


P-Channel Tape & Reel (TR) 150m Ω @ 1.6A, 10V ±20V 330pF @ 25V 10.2nC @ 10V 30V TO-261-4, TO-261AA

ZXM62P03GTA Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 330pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -30V.As a result of its turn-off delay time, which is 13.9 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 2.8 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).

ZXM62P03GTA Features


a continuous drain current (ID) of 4A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 13.9 ns
a 30V drain to source voltage (Vdss)


ZXM62P03GTA Applications


There are a lot of Diodes Incorporated
ZXM62P03GTA applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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