ZXM61N02FTC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2006

Power Dissipation-Max :

625mW Ta

Vgs (Max) :

±12V

Current - Continuous Drain (Id) @ 25°C :

1.7A Ta

Number of Pins :

3

Drain to Source Breakdown Voltage :

20V

Turn-Off Delay Time :

7.8 ns

JESD-609 Code :

e3

Power Dissipation :

806mW

Terminal Position :

Dual

Continuous Drain Current (ID) :

1.7A

Drive Voltage (Max Rds On,Min Rds On) :

2.7V 4.5V

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING

Turn On Delay Time :

2.4 ns

Length :

3.04mm

Input Capacitance (Ciss) (Max) @ Vds :

160pF @ 15V

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

40

Factory Lead Time :

17 Weeks

Number of Elements :

1

Weight :

7.994566mg

FET Type :

N-Channel

Terminal Form :

Gull wing

Fall Time (Typ) :

4.2 ns

Number of Terminations :

3

Voltage - Rated DC :

20V

Peak Reflow Temperature (Cel) :

260

Pin Count :

3

Width :

1.4mm

Terminal Finish :

Matte Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Lead Free :

Lead Free

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

180m Ω @ 930mA, 4.5V

Height :

1.02mm

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

Rise Time :

4.2ns

Gate Charge (Qg) (Max) @ Vgs :

3.4nC @ 4.5V

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-236-3, SC-59, SOT-23-3

Gate to Source Voltage (Vgs) :

12V

Mount :

Surface Mount

Number of Channels :

1

Additional Feature :

LOW THRESHOLD

Element Configuration :

Single

Vgs(th) (Max) @ Id :

700mV @ 250μA

Current Rating :

1.7A