US6T9TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Element Configuration :

Dual

DC Current Gain (hFE) (Min) @ Ic, Vce :

270 @ 100mA 2V

Time@Peak Reflow Temperature-Max (s) :

10

hFE Min :

270

Emitter Base Voltage (VEBO) :

6V

Collector Emitter Voltage (VCEO) :

30V

Factory Lead Time :

12 Weeks

Number of Elements :

2

Gain Bandwidth Product :

320MHz

Operating Temperature :

150°C TJ

Number of Pins :

6

Transistor Type :

2 PNP (Dual)

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Collector Emitter Breakdown Voltage :

30V

Current - Collector (Ic) (Max) :

1A

Packaging :

Tape and Reel (TR)

Transition Frequency :

320MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Number of Terminations :

6

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Power - Max :

400mW

Max Power Dissipation :

1W

Terminal Finish :

Tin/Copper (Sn/Cu)

JESD-609 Code :

e2

Published :

2007

ECCN Code :

EAR99

Pin Count :

6

Vce Saturation (Max) @ Ib, Ic :

350mV @ 25mA, 500mA

Max Collector Current :

1A

Continuous Collector Current :

-1A

Terminal Form :

Flat

Polarity :

PNP

Collector Base Voltage (VCBO) :

-30V

Transistor Application :

AMPLIFIER

Radiation Hardening :

No

Pbfree Code :

yes

Current - Collector Cutoff (Max) :

100nA ICBO

Package / Case :

6-TSSOP, SC-88, SOT-363

Mount :

Surface Mount