US6T5TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

2A

Operating Temperature :

150°C TJ

Factory Lead Time :

12 Weeks

Terminal Finish :

TIN COPPER

Transition Frequency :

280MHz

Time@Peak Reflow Temperature-Max (s) :

10

Emitter Base Voltage (VEBO) :

6V

Published :

2007

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Vce Saturation (Max) @ Ib, Ic :

370mV @ 75mA, 1.5A

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

270 @ 200mA 2V

Pin Count :

6

Number of Pins :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

2A

Pbfree Code :

yes

JESD-609 Code :

e2

hFE Min :

270

Current - Collector Cutoff (Max) :

100nA ICBO

Gain Bandwidth Product :

280MHz

Base Part Number :

US6T

Max Power Dissipation :

1W

Transistor Application :

AMPLIFIER

Mounting Type :

Surface Mount

Number of Elements :

1

Collector Emitter Voltage (VCEO) :

30V

Terminal Position :

Dual

Lead Free :

Lead Free

Collector Base Voltage (VCBO) :

30V

Transistor Type :

PNP

Number of Terminations :

6

Radiation Hardening :

No

Power - Max :

400mW

Peak Reflow Temperature (Cel) :

260

Polarity/Channel Type :

PNP

Element Configuration :

Single

Mount :

Surface Mount

Collector Emitter Breakdown Voltage :

30V

RoHS Status :

ROHS3 Compliant

Package / Case :

6-SMD, Flat Leads