US6T5TR
- Mfr.Part #
- US6T5TR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 6-SMD, Flat Leads
- Datasheet
- Download
- Description
- TRANS PNP 30V 2A TUMT6
- Stock
- 1,440
- In Stock :
- 1,440
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 2A
- Transition Frequency :
- 280MHz
- hFE Min :
- 270
- Max Power Dissipation :
- 1W
- Base Part Number :
- US6T
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 30V
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- AMPLIFIER
- Peak Reflow Temperature (Cel) :
- 260
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 200mA 2V
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 370mV @ 75mA, 1.5A
- Number of Terminations :
- 6
- Collector Emitter Breakdown Voltage :
- 30V
- Gain Bandwidth Product :
- 280MHz
- Pbfree Code :
- yes
- Emitter Base Voltage (VEBO) :
- 6V
- Factory Lead Time :
- 12 Weeks
- Package / Case :
- 6-SMD, Flat Leads
- Collector Base Voltage (VCBO) :
- 30V
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Power - Max :
- 400mW
- Terminal Finish :
- TIN COPPER
- Number of Elements :
- 1
- JESD-609 Code :
- e2
- Operating Temperature :
- 150°C TJ
- Terminal Position :
- Dual
- Current - Collector (Ic) (Max) :
- 2A
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Transistor Type :
- PNP
- Number of Pins :
- 6
- Pin Count :
- 6
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- PNP
- Mount :
- Surface Mount
- Published :
- 2007
- Datasheets
- US6T5TR

PNP 150°C TJ 100nA ICBO 1 Elements 6 Terminations SILICON PNP 6-SMD, Flat Leads Tape & Reel (TR) Surface Mount
US6T5TR Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 270 @ 200mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 370mV @ 75mA, 1.5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 280MHz.During maximum operation, collector current can be as low as 2A volts.
US6T5TR Features
the DC current gain for this device is 270 @ 200mA 2V
the vce saturation(Max) is 370mV @ 75mA, 1.5A
the emitter base voltage is kept at 6V
a transition frequency of 280MHz
US6T5TR Applications
There are a lot of ROHM Semiconductor
US6T5TR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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