US6T5TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single

Factory Lead Time :

12 Weeks

Pin Count :

6

Transistor Type :

PNP

Emitter Base Voltage (VEBO) :

6V

DC Current Gain (hFE) (Min) @ Ic, Vce :

270 @ 200mA 2V

hFE Min :

270

Number of Elements :

1

Power - Max :

400mW

Base Part Number :

US6T

Number of Terminations :

6

Number of Pins :

6

Gain Bandwidth Product :

280MHz

JESD-609 Code :

e2

Current - Collector Cutoff (Max) :

100nA ICBO

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

ECCN Code :

EAR99

Transistor Application :

AMPLIFIER

Operating Temperature :

150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

TIN COPPER

Collector Emitter Breakdown Voltage :

30V

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

10

Collector Base Voltage (VCBO) :

30V

Transition Frequency :

280MHz

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Package / Case :

6-SMD, Flat Leads

Max Power Dissipation :

1W

Transistor Element Material :

SILICON

Vce Saturation (Max) @ Ib, Ic :

370mV @ 75mA, 1.5A

Max Collector Current :

2A

Mount :

Surface Mount

Radiation Hardening :

No

Collector Emitter Voltage (VCEO) :

30V

Published :

2007

Current - Collector (Ic) (Max) :

2A

Terminal Position :

Dual

Polarity/Channel Type :

PNP