US6T5TR

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Mfr.Part #
US6T5TR
Manufacturer
ROHM Semiconductor
Package / Case
6-SMD, Flat Leads
Datasheet
Download
Description
TRANS PNP 30V 2A TUMT6
Stock
1,440
In Stock :
1,440

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Manufacturer :
ROHM Semiconductor
Product Category :
Transistors - Bipolar (BJT) - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Collector Current :
2A
Transition Frequency :
280MHz
hFE Min :
270
Max Power Dissipation :
1W
Base Part Number :
US6T
ECCN Code :
EAR99
RoHS Status :
ROHS3 Compliant
Collector Emitter Voltage (VCEO) :
30V
Packaging :
Tape and Reel (TR)
Transistor Application :
AMPLIFIER
Peak Reflow Temperature (Cel) :
260
DC Current Gain (hFE) (Min) @ Ic, Vce :
270 @ 200mA 2V
Element Configuration :
Single
Vce Saturation (Max) @ Ib, Ic :
370mV @ 75mA, 1.5A
Number of Terminations :
6
Collector Emitter Breakdown Voltage :
30V
Gain Bandwidth Product :
280MHz
Pbfree Code :
yes
Emitter Base Voltage (VEBO) :
6V
Factory Lead Time :
12 Weeks
Package / Case :
6-SMD, Flat Leads
Collector Base Voltage (VCBO) :
30V
Time@Peak Reflow Temperature-Max (s) :
10
Power - Max :
400mW
Terminal Finish :
TIN COPPER
Number of Elements :
1
JESD-609 Code :
e2
Operating Temperature :
150°C TJ
Terminal Position :
Dual
Current - Collector (Ic) (Max) :
2A
Mounting Type :
Surface Mount
Current - Collector Cutoff (Max) :
100nA ICBO
Radiation Hardening :
No
Transistor Element Material :
SILICON
Transistor Type :
PNP
Number of Pins :
6
Pin Count :
6
Lead Free :
Lead Free
Polarity/Channel Type :
PNP
Mount :
Surface Mount
Published :
2007
Datasheets
US6T5TR
Introducing Transistors - Bipolar (BJT) - Single ROHM Semiconductor US6T5TR from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:US6T, Number of Terminations:6, Package / Case:6-SMD, Flat Leads, Operating Temperature:150°C TJ, Mounting Type:Surface Mount, Number of Pins:6, US6T5TR pinout, US6T5TR datasheet PDF, US6T5TR amp .Beyond Transistors - Bipolar (BJT) - Single ROHM Semiconductor US6T5TR ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

ROHM Semiconductor US6T5TR


PNP 150°C TJ 100nA ICBO 1 Elements 6 Terminations SILICON PNP 6-SMD, Flat Leads Tape & Reel (TR) Surface Mount

US6T5TR Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 270 @ 200mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 370mV @ 75mA, 1.5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 280MHz.During maximum operation, collector current can be as low as 2A volts.

US6T5TR Features


the DC current gain for this device is 270 @ 200mA 2V
the vce saturation(Max) is 370mV @ 75mA, 1.5A
the emitter base voltage is kept at 6V
a transition frequency of 280MHz


US6T5TR Applications


There are a lot of ROHM Semiconductor
US6T5TR applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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