US6T6TR

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Elements :

1

Package / Case :

6-SMD, Flat Leads

Radiation Hardening :

No

Operating Temperature :

150°C TJ

Number of Pins :

6

Transistor Element Material :

SILICON

DC Current Gain (hFE) (Min) @ Ic, Vce :

270 @ 200mA 2V

Transition Frequency :

360MHz

Voltage - Rated DC :

-30V

ECCN Code :

EAR99

Max Power Dissipation :

1W

JESD-609 Code :

e2

Transistor Type :

PNP

Polarity/Channel Type :

PNP

Collector Base Voltage (VCBO) :

30V

Terminal Position :

Dual

Published :

2004

Max Collector Current :

2A

Collector Emitter Breakdown Voltage :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

6

Max Breakdown Voltage :

30V

Gain Bandwidth Product :

360MHz

hFE Min :

270

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

10

Mount :

Surface Mount

Collector Emitter Voltage (VCEO) :

30V

Terminal Finish :

TIN COPPER

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Transistor Application :

AMPLIFIER

Lead Free :

Lead Free

Base Part Number :

US6T

Emitter Base Voltage (VEBO) :

6V

Vce Saturation (Max) @ Ib, Ic :

180mV @ 50mA, 1A

Current - Collector Cutoff (Max) :

100nA ICBO

Power - Max :

1W

Pin Count :

6

Mounting Type :

Surface Mount

Current Rating :

-2A

Element Configuration :

Single